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High efficiency photovoltaic device

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Abstract

An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.
Authors:
Publication Date:
Nov 02, 1999
Product Type:
Patent
Reference Number:
EDB-00:007198
Resource Relation:
Other Information: PBD: 2 Nov 1999
Subject:
14 SOLAR ENERGY; PHOTOVOLTAIC CELLS; DOPED MATERIALS; PERFORMANCE; AUGMENTATION
Sponsoring Organizations:
USDOE
OSTI ID:
20014156
Country of Origin:
United States
Language:
English
Other Identifying Numbers:
Other: Int. Cl. H01L 25/00; US 5,977,476/A/; US patent application 8-731,497; TRN: IM200012%%84
Availability:
Patent and Trademark Office, Box 9, Washington, DC 20232 (US)
Submitting Site:
PTO
Size:
[10] pages
Announcement Date:
Mar 22, 2000

Patent:

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Citation Formats

Guha, S, Yang, C C, and Xu, X X. High efficiency photovoltaic device. United States: N. p., 1999. Web.
Guha, S, Yang, C C, & Xu, X X. High efficiency photovoltaic device. United States.
Guha, S, Yang, C C, and Xu, X X. 1999. "High efficiency photovoltaic device." United States.
@misc{etde_20014156,
title = {High efficiency photovoltaic device}
 author = {Guha, S, Yang, C C, and Xu, X X}
 abstractNote = {An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.}
 place = {United States}
 year = {1999}
 month = {Nov}
 }