Abstract
The Cat-CVD method is in verification test to establish it as production process of various semiconductor devices such as Ga-As IC, ferroelectric IC, Si IC, and TFT. This paper outlines the research results in fiscal 1998. Study was made on concept design of the Cat-CVD equipment for formation of Ga-As protective film, and basic technology for formation of SiN{sub x} film. Although reducing gas is used for deposition of SiN{sub x} film, anxious modification of oxide ferroelectric materials was avoided by substrate temperature control. Design and fabrication of the CVD equipment for Si ICs were also studied. The equipment was made of Al to control degassing as low as possible. As for production of TFT for LCD, formation technology of high-quality insulating thin film for low-temperature poly-Si TFT by CVD method, and formation of advanced insulating thin film and advanced poly- Si thin film were studied. A large-size deposition method of TFT insulating film, and low-temperature formation technology of poly-Si were also studied. (NEDO)
Citation Formats
None.
Fiscal 1998 joint R and D project on industrial science and technology with university. Research report on the production process of semiconductor devices by Cat-CVD (Development of practical technology for rational use of energy); 1998 nendo daigaku renkei sangyo kagaku gijutsu kenkyu kaihatsu project. Cat-CVD ho ni yoru handotai device seizo process seika hokokusho (energy shiyo gorika kankei gijutsu jitsuyoka kaihatsu).
Japan: N. p.,
1996.
Web.
None.
Fiscal 1998 joint R and D project on industrial science and technology with university. Research report on the production process of semiconductor devices by Cat-CVD (Development of practical technology for rational use of energy); 1998 nendo daigaku renkei sangyo kagaku gijutsu kenkyu kaihatsu project. Cat-CVD ho ni yoru handotai device seizo process seika hokokusho (energy shiyo gorika kankei gijutsu jitsuyoka kaihatsu).
Japan.
None.
1996.
"Fiscal 1998 joint R and D project on industrial science and technology with university. Research report on the production process of semiconductor devices by Cat-CVD (Development of practical technology for rational use of energy); 1998 nendo daigaku renkei sangyo kagaku gijutsu kenkyu kaihatsu project. Cat-CVD ho ni yoru handotai device seizo process seika hokokusho (energy shiyo gorika kankei gijutsu jitsuyoka kaihatsu)."
Japan.
@misc{etde_20011924,
title = {Fiscal 1998 joint R and D project on industrial science and technology with university. Research report on the production process of semiconductor devices by Cat-CVD (Development of practical technology for rational use of energy); 1998 nendo daigaku renkei sangyo kagaku gijutsu kenkyu kaihatsu project. Cat-CVD ho ni yoru handotai device seizo process seika hokokusho (energy shiyo gorika kankei gijutsu jitsuyoka kaihatsu)}
author = {None}
abstractNote = {The Cat-CVD method is in verification test to establish it as production process of various semiconductor devices such as Ga-As IC, ferroelectric IC, Si IC, and TFT. This paper outlines the research results in fiscal 1998. Study was made on concept design of the Cat-CVD equipment for formation of Ga-As protective film, and basic technology for formation of SiN{sub x} film. Although reducing gas is used for deposition of SiN{sub x} film, anxious modification of oxide ferroelectric materials was avoided by substrate temperature control. Design and fabrication of the CVD equipment for Si ICs were also studied. The equipment was made of Al to control degassing as low as possible. As for production of TFT for LCD, formation technology of high-quality insulating thin film for low-temperature poly-Si TFT by CVD method, and formation of advanced insulating thin film and advanced poly- Si thin film were studied. A large-size deposition method of TFT insulating film, and low-temperature formation technology of poly-Si were also studied. (NEDO)}
place = {Japan}
year = {1996}
month = {Mar}
}
title = {Fiscal 1998 joint R and D project on industrial science and technology with university. Research report on the production process of semiconductor devices by Cat-CVD (Development of practical technology for rational use of energy); 1998 nendo daigaku renkei sangyo kagaku gijutsu kenkyu kaihatsu project. Cat-CVD ho ni yoru handotai device seizo process seika hokokusho (energy shiyo gorika kankei gijutsu jitsuyoka kaihatsu)}
author = {None}
abstractNote = {The Cat-CVD method is in verification test to establish it as production process of various semiconductor devices such as Ga-As IC, ferroelectric IC, Si IC, and TFT. This paper outlines the research results in fiscal 1998. Study was made on concept design of the Cat-CVD equipment for formation of Ga-As protective film, and basic technology for formation of SiN{sub x} film. Although reducing gas is used for deposition of SiN{sub x} film, anxious modification of oxide ferroelectric materials was avoided by substrate temperature control. Design and fabrication of the CVD equipment for Si ICs were also studied. The equipment was made of Al to control degassing as low as possible. As for production of TFT for LCD, formation technology of high-quality insulating thin film for low-temperature poly-Si TFT by CVD method, and formation of advanced insulating thin film and advanced poly- Si thin film were studied. A large-size deposition method of TFT insulating film, and low-temperature formation technology of poly-Si were also studied. (NEDO)}
place = {Japan}
year = {1996}
month = {Mar}
}