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Properties of RF sputtered zinc oxide based thin films made from different targets

Abstract

The effect of deposition parameters on optoelectronic and structural properties of ZnO based thin films prepared by RF magnetron sputtering have been studied. Different targets (pure Zn, ZnO, Zn-Al (98/2 at%), ZnO-Al (98/2 at%), and ZnO-Al{sub 2}O{sub 3} (98/2 wt%)) have been investigated to compare resulting samples and establish the best target composition. From reactive sputtering, using a Zn-Al target, transparent conductive zinc oxide has been obtained at 380{sup o}C with E{sub g}=3.25-3.35 eV and {rho}=4.8x10{sup -4} {Omega}cm. Reduction of substrate temperature at 200{sup o}C has been possible by nonreactive sputtering from ZnO-Al and ZnO-Al{sub 2}O{sub 3} targets. The values of the energy gap and resistivity under these conditions are 3.30-3.35 eV and 1x10{sup -3} {Omega}cm respectively
Authors:
Martinez, M A; Herrero, J; Gutierrez, M T [1] 
  1. Instituto de Energias Renovables, Madrid (Spain)
Publication Date:
Jan 01, 1994
Product Type:
Journal Article
Reference Number:
SCA: 140501; PA: ECN-94:0E0486; EDB-94:051129; SN: 94001175730
Resource Relation:
Journal Name: Solar Energy Materials and Solar Cells; Journal Volume: 31; Journal Issue: 4; Other Information: PBD: 1 Jan 1994
Subject:
14 SOLAR ENERGY; THIN FILMS; COMPARATIVE EVALUATIONS; ZINC OXIDES; ZINC BASE ALLOYS; SPUTTERING; DEPOSITION; ZINC; ALUMINIUM; ALUMINIUM OXIDES; ENERGY GAP; ELECTRIC CONDUCTIVITY
OSTI ID:
144590
Country of Origin:
Netherlands
Language:
English
Other Identifying Numbers:
Journal ID: SEMCEQ; ISSN 0927-0248; TRN: NL94E0486
Submitting Site:
ECN
Size:
pp. 489-498
Announcement Date:

Citation Formats

Martinez, M A, Herrero, J, and Gutierrez, M T. Properties of RF sputtered zinc oxide based thin films made from different targets. Netherlands: N. p., 1994. Web. doi:10.1016/0927-0248(94)90191-0.
Martinez, M A, Herrero, J, & Gutierrez, M T. Properties of RF sputtered zinc oxide based thin films made from different targets. Netherlands. doi:10.1016/0927-0248(94)90191-0.
Martinez, M A, Herrero, J, and Gutierrez, M T. 1994. "Properties of RF sputtered zinc oxide based thin films made from different targets." Netherlands. doi:10.1016/0927-0248(94)90191-0. https://www.osti.gov/servlets/purl/10.1016/0927-0248(94)90191-0.
@misc{etde_144590,
title = {Properties of RF sputtered zinc oxide based thin films made from different targets}
author = {Martinez, M A, Herrero, J, and Gutierrez, M T}
abstractNote = {The effect of deposition parameters on optoelectronic and structural properties of ZnO based thin films prepared by RF magnetron sputtering have been studied. Different targets (pure Zn, ZnO, Zn-Al (98/2 at%), ZnO-Al (98/2 at%), and ZnO-Al{sub 2}O{sub 3} (98/2 wt%)) have been investigated to compare resulting samples and establish the best target composition. From reactive sputtering, using a Zn-Al target, transparent conductive zinc oxide has been obtained at 380{sup o}C with E{sub g}=3.25-3.35 eV and {rho}=4.8x10{sup -4} {Omega}cm. Reduction of substrate temperature at 200{sup o}C has been possible by nonreactive sputtering from ZnO-Al and ZnO-Al{sub 2}O{sub 3} targets. The values of the energy gap and resistivity under these conditions are 3.30-3.35 eV and 1x10{sup -3} {Omega}cm respectively}
doi = {10.1016/0927-0248(94)90191-0}
journal = {Solar Energy Materials and Solar Cells}
issue = {4}
volume = {31}
journal type = {AC}
place = {Netherlands}
year = {1994}
month = {Jan}
}