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Simulation of neutron irradiation damage in Al-A5 alloy by ion implantation

Abstract

Ion implantation was used to simulate neutron irradiation damage in Al-A5 alloys. The damage was investigated by scanning electron microscopy. H{sup +} and He{sup +} ions were implanted up to a dose of 2x10{sup 4} microcuri. It was found, that H{sup +} ions caused the appearacnce of blisters and holes on the surface. The density of the blisters and holes is a function of implanted dose. The He{sup +} ions caused sputtering of surface via flanking. (author).
Publication Date:
Sep 01, 1991
Product Type:
Technical Report
Report Number:
NRCN-559
Reference Number:
SCA: 360106; 665300; PA: AIX-23:046956; SN: 92000770903
Resource Relation:
Other Information: PBD: Sep 1991
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM BASE ALLOYS; PHYSICAL RADIATION EFFECTS; ION IMPLANTATION; NEUTRONS; SIMULATION; 360106; 665300; RADIATION EFFECTS; INTERACTIONS BETWEEN BEAMS AND CONDENSED MATTER
OSTI ID:
10157062
Research Organizations:
Israel Atomic Energy Commission, Beersheba (Israel). Nuclear Research Center-Negev
Country of Origin:
Israel
Language:
Hebrew
Other Identifying Numbers:
Other: ON: DE92633554; TRN: IL9204756046956
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
INIS
Size:
20 p.
Announcement Date:
Jul 06, 2005

Citation Formats

Munitz, A, and Cotler, K. Simulation of neutron irradiation damage in Al-A5 alloy by ion implantation. Israel: N. p., 1991. Web.
Munitz, A, & Cotler, K. Simulation of neutron irradiation damage in Al-A5 alloy by ion implantation. Israel.
Munitz, A, and Cotler, K. 1991. "Simulation of neutron irradiation damage in Al-A5 alloy by ion implantation." Israel.
@misc{etde_10157062,
title = {Simulation of neutron irradiation damage in Al-A5 alloy by ion implantation}
author = {Munitz, A, and Cotler, K}
abstractNote = {Ion implantation was used to simulate neutron irradiation damage in Al-A5 alloys. The damage was investigated by scanning electron microscopy. H{sup +} and He{sup +} ions were implanted up to a dose of 2x10{sup 4} microcuri. It was found, that H{sup +} ions caused the appearacnce of blisters and holes on the surface. The density of the blisters and holes is a function of implanted dose. The He{sup +} ions caused sputtering of surface via flanking. (author).}
place = {Israel}
year = {1991}
month = {Sep}
}