Abstract
Thin film capacitors with vanadium pentoxide of various thickness (165-320 nm) have been prepared by vacuum deposition. The dielectric constants of these films are thickness dependent and have values between 97 and 137. Capacitances are found to decrease with increasing frequency and show a minimum around 100 kHz. The temperature coefficient of capacitance is found to be 1300-2300 ppm/K. The capacitors are stable and have high capacitance density (0.4 {mu} F/cm{sup 2}) and breakdown field (- 10{sup 5} V/cm). (author). 17 refs., 5 figs.
Pankajakshan, V S;
Neelakandan, K;
[1]
Menon, C S
[2]
- Univ. of Calicut, Calicut (India). Dept. of Physics
- Mahatma Gandhi Univ., Kottayam (India). School of Pure and Applied Physics
Citation Formats
Pankajakshan, V S, Neelakandan, K, and Menon, C S.
Dielectric properties of vacuum deposited vanadium pentoxide thin film capacitor.
India: N. p.,
1994.
Web.
Pankajakshan, V S, Neelakandan, K, & Menon, C S.
Dielectric properties of vacuum deposited vanadium pentoxide thin film capacitor.
India.
Pankajakshan, V S, Neelakandan, K, and Menon, C S.
1994.
"Dielectric properties of vacuum deposited vanadium pentoxide thin film capacitor."
India.
@misc{etde_101557,
title = {Dielectric properties of vacuum deposited vanadium pentoxide thin film capacitor}
author = {Pankajakshan, V S, Neelakandan, K, and Menon, C S}
abstractNote = {Thin film capacitors with vanadium pentoxide of various thickness (165-320 nm) have been prepared by vacuum deposition. The dielectric constants of these films are thickness dependent and have values between 97 and 137. Capacitances are found to decrease with increasing frequency and show a minimum around 100 kHz. The temperature coefficient of capacitance is found to be 1300-2300 ppm/K. The capacitors are stable and have high capacitance density (0.4 {mu} F/cm{sup 2}) and breakdown field (- 10{sup 5} V/cm). (author). 17 refs., 5 figs.}
journal = []
issue = {5}
volume = {68}
journal type = {AC}
place = {India}
year = {1994}
month = {Sep}
}
title = {Dielectric properties of vacuum deposited vanadium pentoxide thin film capacitor}
author = {Pankajakshan, V S, Neelakandan, K, and Menon, C S}
abstractNote = {Thin film capacitors with vanadium pentoxide of various thickness (165-320 nm) have been prepared by vacuum deposition. The dielectric constants of these films are thickness dependent and have values between 97 and 137. Capacitances are found to decrease with increasing frequency and show a minimum around 100 kHz. The temperature coefficient of capacitance is found to be 1300-2300 ppm/K. The capacitors are stable and have high capacitance density (0.4 {mu} F/cm{sup 2}) and breakdown field (- 10{sup 5} V/cm). (author). 17 refs., 5 figs.}
journal = []
issue = {5}
volume = {68}
journal type = {AC}
place = {India}
year = {1994}
month = {Sep}
}