Abstract
Positron lifetime measurements show that electron irradiation produces negative vacancies and negative ions at 20 K in semi-insulating GaAs. The vacancies anneal between 77-500 K with a sharp stage in the range 270-370 K. The ions anneal at high temperature above 450 K. The negative ions are identified to isolated gallium antisites. The negative vacancies are identified to gallium vacancies either isolated or involved in negatively-charged complexes. The introduction rate of the gallium antisites is estimated to be 1.8{+-}0.4 cm{sup -1} after 1.5 MeV electron irradiation at 20 K.
Corbel, C;
Pierre, F;
[1]
Moser, P;
[2]
Hautojarvi, P;
Saarinen, K
[3]
- Institut National des Sciences et Techniques Nucleaires (INSTN), Centre d`Etudes de Saclay, 91 - Gif-sur-Yvette (France)
- CEA Centre d`Etudes de Grenoble, 38 (France). Dept. de Recherche Fondamentale sur la Matiere Condensee
- Helsinki Univ. of Technology, Espoo (Finland). Lab. of Physics
Citation Formats
Corbel, C, Pierre, F, Moser, P, Hautojarvi, P, and Saarinen, K.
Positron annihilation in electron irradiated GaAs: atomic structure and charge state of the defects.
France: N. p.,
1991.
Web.
Corbel, C, Pierre, F, Moser, P, Hautojarvi, P, & Saarinen, K.
Positron annihilation in electron irradiated GaAs: atomic structure and charge state of the defects.
France.
Corbel, C, Pierre, F, Moser, P, Hautojarvi, P, and Saarinen, K.
1991.
"Positron annihilation in electron irradiated GaAs: atomic structure and charge state of the defects."
France.
@misc{etde_10154138,
title = {Positron annihilation in electron irradiated GaAs: atomic structure and charge state of the defects}
author = {Corbel, C, Pierre, F, Moser, P, Hautojarvi, P, and Saarinen, K}
abstractNote = {Positron lifetime measurements show that electron irradiation produces negative vacancies and negative ions at 20 K in semi-insulating GaAs. The vacancies anneal between 77-500 K with a sharp stage in the range 270-370 K. The ions anneal at high temperature above 450 K. The negative ions are identified to isolated gallium antisites. The negative vacancies are identified to gallium vacancies either isolated or involved in negatively-charged complexes. The introduction rate of the gallium antisites is estimated to be 1.8{+-}0.4 cm{sup -1} after 1.5 MeV electron irradiation at 20 K.}
place = {France}
year = {1991}
month = {Dec}
}
title = {Positron annihilation in electron irradiated GaAs: atomic structure and charge state of the defects}
author = {Corbel, C, Pierre, F, Moser, P, Hautojarvi, P, and Saarinen, K}
abstractNote = {Positron lifetime measurements show that electron irradiation produces negative vacancies and negative ions at 20 K in semi-insulating GaAs. The vacancies anneal between 77-500 K with a sharp stage in the range 270-370 K. The ions anneal at high temperature above 450 K. The negative ions are identified to isolated gallium antisites. The negative vacancies are identified to gallium vacancies either isolated or involved in negatively-charged complexes. The introduction rate of the gallium antisites is estimated to be 1.8{+-}0.4 cm{sup -1} after 1.5 MeV electron irradiation at 20 K.}
place = {France}
year = {1991}
month = {Dec}
}