Abstract
We use positron lifetime studies performed in GaAs materials to show the defect properties which can be investigated by implanting positive positrons in semiconductors. The studies concern native and electron irradiation induced defects. These studies show that vacancy charge state and vacancy ionization levels can be determined from positron annihilation. They show also that positrons are trapped by negative ions and give information on their concentration.
Citation Formats
Corbel, C.
Vacancies and negative ions in GaAs.
France: N. p.,
1991.
Web.
Corbel, C.
Vacancies and negative ions in GaAs.
France.
Corbel, C.
1991.
"Vacancies and negative ions in GaAs."
France.
@misc{etde_10153065,
title = {Vacancies and negative ions in GaAs}
author = {Corbel, C}
abstractNote = {We use positron lifetime studies performed in GaAs materials to show the defect properties which can be investigated by implanting positive positrons in semiconductors. The studies concern native and electron irradiation induced defects. These studies show that vacancy charge state and vacancy ionization levels can be determined from positron annihilation. They show also that positrons are trapped by negative ions and give information on their concentration.}
place = {France}
year = {1991}
month = {Dec}
}
title = {Vacancies and negative ions in GaAs}
author = {Corbel, C}
abstractNote = {We use positron lifetime studies performed in GaAs materials to show the defect properties which can be investigated by implanting positive positrons in semiconductors. The studies concern native and electron irradiation induced defects. These studies show that vacancy charge state and vacancy ionization levels can be determined from positron annihilation. They show also that positrons are trapped by negative ions and give information on their concentration.}
place = {France}
year = {1991}
month = {Dec}
}