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Electrochemical preparation and characterization of CuInSe{sub 2} thin films for photovoltaic applications; Preparacion electroquimica y caracterizacion de laminas delgadas de CuInSe{sub 2} para aplicaciones fotovoltaicas

Thesis/Dissertation:

Abstract

The objective of this work has been to investigate the electrodeposition as a low-cost, large-area fabrication process to obtain CuInSe{sub 2} this films for efficient photovoltaic devices. this objective entails the elucidation of thin film deposition mechanism, the study of the fundamental properties of electrodeposited material, and also the modification of their physical and chemical parameters for photovoltaic applications. CuInSe{sub 2} thin films have been successfully electrodeposited from a citric was characterized by compositional, structural, electrical, optical and electrochemical measurements, relating their properties with the preparation parameters and also studying the effect of various thermal and chemical treatments. The results showed post-deposition treatment are needed for optimizing these films for solar cells fabrication: first, an annealing in inert atmosphere at temperatures above 400 degrees celsius to obtain a high recrystallization in the chalcopyrite structure, and after a chemical etching in KCN solution to remove secondary phases of Cu{sub x}Se and Se which are frequently electrodeposited with the CuInSe{sub 2}. The treated samples showed appropriate photovoltaic activity in a semiconductor-electrolite liquid junction. (author) 193 ref.
Publication Date:
Dec 31, 1992
Product Type:
Thesis/Dissertation
Report Number:
INIS-mf-13533
Reference Number:
SCA: 360600; PA: AIX-24:044554; SN: 93000988686
Resource Relation:
Other Information: TH: Thesis (Ph.D).; PBD: 1992
Subject:
36 MATERIALS SCIENCE; PHOTOVOLTAIC CELLS; ELECTRODEPOSITION; INDIUM SELENIDE SOLAR CELLS; THIN FILMS; COPPER SELENIDES; INDIUM SELENIDES; PHOTOVOLTAIC CONVERSION; 360600; OTHER MATERIALS
OSTI ID:
10151763
Research Organizations:
Universidad Complutense de Madrid (Spain). Dept. de Fisica Atomica, Molecular y Nuclear
Country of Origin:
Spain
Language:
Spanish
Other Identifying Numbers:
Other: ON: DE93624492; TRN: ES9300005044554
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
INIS
Size:
[279] p.
Announcement Date:

Thesis/Dissertation:

Citation Formats

Guillen Arqueros, C. Electrochemical preparation and characterization of CuInSe{sub 2} thin films for photovoltaic applications; Preparacion electroquimica y caracterizacion de laminas delgadas de CuInSe{sub 2} para aplicaciones fotovoltaicas. Spain: N. p., 1992. Web.
Guillen Arqueros, C. Electrochemical preparation and characterization of CuInSe{sub 2} thin films for photovoltaic applications; Preparacion electroquimica y caracterizacion de laminas delgadas de CuInSe{sub 2} para aplicaciones fotovoltaicas. Spain.
Guillen Arqueros, C. 1992. "Electrochemical preparation and characterization of CuInSe{sub 2} thin films for photovoltaic applications; Preparacion electroquimica y caracterizacion de laminas delgadas de CuInSe{sub 2} para aplicaciones fotovoltaicas." Spain.
@misc{etde_10151763,
title = {Electrochemical preparation and characterization of CuInSe{sub 2} thin films for photovoltaic applications; Preparacion electroquimica y caracterizacion de laminas delgadas de CuInSe{sub 2} para aplicaciones fotovoltaicas}
author = {Guillen Arqueros, C}
abstractNote = {The objective of this work has been to investigate the electrodeposition as a low-cost, large-area fabrication process to obtain CuInSe{sub 2} this films for efficient photovoltaic devices. this objective entails the elucidation of thin film deposition mechanism, the study of the fundamental properties of electrodeposited material, and also the modification of their physical and chemical parameters for photovoltaic applications. CuInSe{sub 2} thin films have been successfully electrodeposited from a citric was characterized by compositional, structural, electrical, optical and electrochemical measurements, relating their properties with the preparation parameters and also studying the effect of various thermal and chemical treatments. The results showed post-deposition treatment are needed for optimizing these films for solar cells fabrication: first, an annealing in inert atmosphere at temperatures above 400 degrees celsius to obtain a high recrystallization in the chalcopyrite structure, and after a chemical etching in KCN solution to remove secondary phases of Cu{sub x}Se and Se which are frequently electrodeposited with the CuInSe{sub 2}. The treated samples showed appropriate photovoltaic activity in a semiconductor-electrolite liquid junction. (author) 193 ref.}
place = {Spain}
year = {1992}
month = {Dec}
}