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Preparation, properties, and application characteristics of metastable layers of the Ti-Si-C-N system; Herstellung, Aufbau, Eigenschaften und Anwendungsverhalten von metastabilen Schichten aus dem System Ti-Si-C-N

Abstract

In the Ti-Si-C and Ti-Si-C-N systems, metastable layers were precipitated by means of non-reactive magnetron sputtering of hot-pressed two-phase TiC/SiC and TiN/SiC targets with 20 mole% and 50 mole% SiC. The preparation parameters were varied as follows: ion bombardment during precipitation (bias sputtering), substrate temperature, and annealing times when annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC layers. Sputtering of targets containing 20% SiC was found to result in monophase fcc layers (NaCl structure). This was documented on the basis of X-ray and electron diffraction patterns. Direct precipitation of targets with 50 mole% SiC resulted in amorphous layers. Increasing the ion bombardment during accretion, raising the substrate temperature, and annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC (layers precipitated directly) resulted in the crystallization of TiC and TiN nanocrystallites, respectively, imbedded in an amorphous SiC matrix. These crystallites were detected both by X-ray and by electron diffractions and by XPS studies. The XPS measurements of crystalline TiC and amorphous SiC reference layers demonstrated the existence of new kinds of carbon interface phases (`pseudocarbide layers`) around TiC and amorphous SiC regions, respectively, which have a positive impact on the mechanical properties of the layers. The hardness of the layers can be correlated with  More>>
Authors:
Publication Date:
Oct 01, 1992
Product Type:
Thesis/Dissertation
Report Number:
KFK-5021
Reference Number:
SCA: 360204; 360202; PA: DEN-93:005519; SN: 93000982991
Resource Relation:
Other Information: TH: Diss.; PBD: Oct 1992
Subject:
36 MATERIALS SCIENCE; TITANIUM CARBIDES; SPUTTERING; TITANIUM NITRATES; SILICON CARBIDES; LAYERS; SUBSTRATES; AMORPHOUS STATE; ANNEALING; CRYSTALLIZATION; FCC LATTICES; LATTICE PARAMETERS; X-RAY DIFFRACTION; ELECTRON DIFFRACTION; MICROHARDNESS; ADHESION; WEAR; ELECTRIC CONDUCTIVITY; FRACTURES; 360204; 360202; PHYSICAL PROPERTIES; STRUCTURE AND PHASE STUDIES
OSTI ID:
10148230
Research Organizations:
Kernforschungszentrum Karlsruhe GmbH (Germany). Inst. fuer Materialforschung; Karlsruhe Univ. (T.H.) (Germany). Fakultaet fuer Maschinenbau
Country of Origin:
Germany
Language:
German
Other Identifying Numbers:
Other: ON: DE93786041; TRN: DE9305519
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
DEN
Size:
194 p.
Announcement Date:
Jul 05, 2005

Citation Formats

Fella, R. Preparation, properties, and application characteristics of metastable layers of the Ti-Si-C-N system; Herstellung, Aufbau, Eigenschaften und Anwendungsverhalten von metastabilen Schichten aus dem System Ti-Si-C-N. Germany: N. p., 1992. Web.
Fella, R. Preparation, properties, and application characteristics of metastable layers of the Ti-Si-C-N system; Herstellung, Aufbau, Eigenschaften und Anwendungsverhalten von metastabilen Schichten aus dem System Ti-Si-C-N. Germany.
Fella, R. 1992. "Preparation, properties, and application characteristics of metastable layers of the Ti-Si-C-N system; Herstellung, Aufbau, Eigenschaften und Anwendungsverhalten von metastabilen Schichten aus dem System Ti-Si-C-N." Germany.
@misc{etde_10148230,
title = {Preparation, properties, and application characteristics of metastable layers of the Ti-Si-C-N system; Herstellung, Aufbau, Eigenschaften und Anwendungsverhalten von metastabilen Schichten aus dem System Ti-Si-C-N}
author = {Fella, R}
abstractNote = {In the Ti-Si-C and Ti-Si-C-N systems, metastable layers were precipitated by means of non-reactive magnetron sputtering of hot-pressed two-phase TiC/SiC and TiN/SiC targets with 20 mole% and 50 mole% SiC. The preparation parameters were varied as follows: ion bombardment during precipitation (bias sputtering), substrate temperature, and annealing times when annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC layers. Sputtering of targets containing 20% SiC was found to result in monophase fcc layers (NaCl structure). This was documented on the basis of X-ray and electron diffraction patterns. Direct precipitation of targets with 50 mole% SiC resulted in amorphous layers. Increasing the ion bombardment during accretion, raising the substrate temperature, and annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC (layers precipitated directly) resulted in the crystallization of TiC and TiN nanocrystallites, respectively, imbedded in an amorphous SiC matrix. These crystallites were detected both by X-ray and by electron diffractions and by XPS studies. The XPS measurements of crystalline TiC and amorphous SiC reference layers demonstrated the existence of new kinds of carbon interface phases (`pseudocarbide layers`) around TiC and amorphous SiC regions, respectively, which have a positive impact on the mechanical properties of the layers. The hardness of the layers can be correlated with the degrees of crystallization and texture. Adhesion and toughness are worse in SiC-bearing layers than PVD TiC and TiN layers, respectively. The application characteristics of the layers were determined by model wear tests relative to 100Cr6 by means of a pin/disk tribometer. N-bearing layers were found to have clearly higher friction coefficients and greater wear than layers without N. (orig.).}
place = {Germany}
year = {1992}
month = {Oct}
}