Abstract
The hypothesis that the precipitation of self-interstitial Si atoms leads to the formation of the diamond hexagonal silicon phase, inside the structure of (113) stacking faults and rod-like defects, is reviewed on the basis of calculations of the total energy of the defects and HREM image simulations. The relaxed atomic structures of several (113) defect models is obtained by static molecular method, in which the Tersoff potential for Si has been adopted. The output of the program consists of the atom coordinates and the energy difference per atom in the relaxed configuration with respect to that in the perfect Si crystal.
Bourret, A;
[1]
Parisini, A
[2]
- CEA Centre d`Etudes de Grenoble, 38 (France). Dept. de Recherche Fondamentale sur la Matiere Condensee
- Consiglio Nazionale delle Ricerche, Bologna (Italy)
Citation Formats
Bourret, A, and Parisini, A.
Diamond-hexagonal silicon phase and (113) defects.
France: N. p.,
1993.
Web.
Bourret, A, & Parisini, A.
Diamond-hexagonal silicon phase and (113) defects.
France.
Bourret, A, and Parisini, A.
1993.
"Diamond-hexagonal silicon phase and (113) defects."
France.
@misc{etde_10146785,
title = {Diamond-hexagonal silicon phase and (113) defects}
author = {Bourret, A, and Parisini, A}
abstractNote = {The hypothesis that the precipitation of self-interstitial Si atoms leads to the formation of the diamond hexagonal silicon phase, inside the structure of (113) stacking faults and rod-like defects, is reviewed on the basis of calculations of the total energy of the defects and HREM image simulations. The relaxed atomic structures of several (113) defect models is obtained by static molecular method, in which the Tersoff potential for Si has been adopted. The output of the program consists of the atom coordinates and the energy difference per atom in the relaxed configuration with respect to that in the perfect Si crystal.}
place = {France}
year = {1993}
month = {Dec}
}
title = {Diamond-hexagonal silicon phase and (113) defects}
author = {Bourret, A, and Parisini, A}
abstractNote = {The hypothesis that the precipitation of self-interstitial Si atoms leads to the formation of the diamond hexagonal silicon phase, inside the structure of (113) stacking faults and rod-like defects, is reviewed on the basis of calculations of the total energy of the defects and HREM image simulations. The relaxed atomic structures of several (113) defect models is obtained by static molecular method, in which the Tersoff potential for Si has been adopted. The output of the program consists of the atom coordinates and the energy difference per atom in the relaxed configuration with respect to that in the perfect Si crystal.}
place = {France}
year = {1993}
month = {Dec}
}