Abstract
Latent tracks have been observed in amorphous semi-conductors after heavy ion irradiation in the electronic stopping power regime. A transient thermodynamic model is developed including energy diffusion on the electron gas and on the atomic lattice and energy exchange between these two systems. A set of two non linear differential equations is solved numerically in cylindrical geometry in order to predict the radii of the latent tracks observed in amorphous germanium and silicon. A good agreement is obtained for the two materials using the same set of input parameters for the energy diffusion on the electronic system and the same coupling constant for the energy exchange between electron and lattice atoms despite the large differences in the macroscopic lattice thermodynamical parameters of the two materials
Dufour, C;
Toulemonde, M;
Paumier, E;
[1]
Lesellier de Chezelles, B;
Delignon, V
- Grand Accelerateur National d`Ions Lourds (GANIL), 14 - Caen (France)
Citation Formats
Dufour, C, Toulemonde, M, Paumier, E, Lesellier de Chezelles, B, and Delignon, V.
A transient thermodynamic model for track formation in amorphous semi-conductors: a possible mechanism.
France: N. p.,
1991.
Web.
Dufour, C, Toulemonde, M, Paumier, E, Lesellier de Chezelles, B, & Delignon, V.
A transient thermodynamic model for track formation in amorphous semi-conductors: a possible mechanism.
France.
Dufour, C, Toulemonde, M, Paumier, E, Lesellier de Chezelles, B, and Delignon, V.
1991.
"A transient thermodynamic model for track formation in amorphous semi-conductors: a possible mechanism."
France.
@misc{etde_10146593,
title = {A transient thermodynamic model for track formation in amorphous semi-conductors: a possible mechanism}
author = {Dufour, C, Toulemonde, M, Paumier, E, Lesellier de Chezelles, B, and Delignon, V}
abstractNote = {Latent tracks have been observed in amorphous semi-conductors after heavy ion irradiation in the electronic stopping power regime. A transient thermodynamic model is developed including energy diffusion on the electron gas and on the atomic lattice and energy exchange between these two systems. A set of two non linear differential equations is solved numerically in cylindrical geometry in order to predict the radii of the latent tracks observed in amorphous germanium and silicon. A good agreement is obtained for the two materials using the same set of input parameters for the energy diffusion on the electronic system and the same coupling constant for the energy exchange between electron and lattice atoms despite the large differences in the macroscopic lattice thermodynamical parameters of the two materials}
place = {France}
year = {1991}
month = {Dec}
}
title = {A transient thermodynamic model for track formation in amorphous semi-conductors: a possible mechanism}
author = {Dufour, C, Toulemonde, M, Paumier, E, Lesellier de Chezelles, B, and Delignon, V}
abstractNote = {Latent tracks have been observed in amorphous semi-conductors after heavy ion irradiation in the electronic stopping power regime. A transient thermodynamic model is developed including energy diffusion on the electron gas and on the atomic lattice and energy exchange between these two systems. A set of two non linear differential equations is solved numerically in cylindrical geometry in order to predict the radii of the latent tracks observed in amorphous germanium and silicon. A good agreement is obtained for the two materials using the same set of input parameters for the energy diffusion on the electronic system and the same coupling constant for the energy exchange between electron and lattice atoms despite the large differences in the macroscopic lattice thermodynamical parameters of the two materials}
place = {France}
year = {1991}
month = {Dec}
}