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Use of polarized ion beams in nuclear microanalysis; Ispol`zovanie puchkov polyarizovannykh ionov v yadernom mikrokanalize

Abstract

The possibility to make use of polarized ion beams in the backscattering method with the purpose of increasing its sensitivity to investigation of light surface dopants is discussed. The equation for calculation if the necessary initial energy of incident ions was obtained. The investigation of surface dopants in silicon is discussed as a example. 4 refs.; 2 figs.
Authors:
Publication Date:
Dec 31, 1990
Product Type:
Technical Report
Report Number:
KIYaI-90-6
Reference Number:
SCA: 663400; PA: AIX-23:045554; SN: 92000743133
Resource Relation:
Other Information: PBD: 1990
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS; MICROANALYSIS; POLARIZED BEAMS; RESONANCE SCATTERING; PROTON REACTIONS; SILICON 28; 663400; SPECIFIC NUCLEAR REACTIONS AND SCATTERING
OSTI ID:
10145713
Research Organizations:
AN Ukrainskoj SSR, Kiev (Ukraine). Inst. Yadernykh Issledovanij
Country of Origin:
Ukraine
Language:
Russian
Other Identifying Numbers:
Other: ON: DE92630344; TRN: UA9200271045554
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
INIS
Size:
9 p.
Announcement Date:
Jul 05, 2005

Citation Formats

Soroka, V I. Use of polarized ion beams in nuclear microanalysis; Ispol`zovanie puchkov polyarizovannykh ionov v yadernom mikrokanalize. Ukraine: N. p., 1990. Web.
Soroka, V I. Use of polarized ion beams in nuclear microanalysis; Ispol`zovanie puchkov polyarizovannykh ionov v yadernom mikrokanalize. Ukraine.
Soroka, V I. 1990. "Use of polarized ion beams in nuclear microanalysis; Ispol`zovanie puchkov polyarizovannykh ionov v yadernom mikrokanalize." Ukraine.
@misc{etde_10145713,
title = {Use of polarized ion beams in nuclear microanalysis; Ispol`zovanie puchkov polyarizovannykh ionov v yadernom mikrokanalize}
author = {Soroka, V I}
abstractNote = {The possibility to make use of polarized ion beams in the backscattering method with the purpose of increasing its sensitivity to investigation of light surface dopants is discussed. The equation for calculation if the necessary initial energy of incident ions was obtained. The investigation of surface dopants in silicon is discussed as a example. 4 refs.; 2 figs.}
place = {Ukraine}
year = {1990}
month = {Dec}
}