Abstract
Thermal annealing of the two hole traps H{sub 4} and H{sub 5} in room-temperature electron-irradiated In P Schottky diodes was investigated. Electron-irradiation energy ranging between 0.15 and 1.5 MeV with doses ranging between 5 x 10{sup 14} and 10{sup 16} e/cm{sup 2}. DLTS technique with double-phase detector was used in this study. Contrary to what is generally admitted, we found that H{sub 5} anneals out at about 150 C{sup o} with an activation energy of 1 eV. We have shown that H{sub 4} is a complex defect having two components that we could resolve. While the first one, having lower emission cross section and higher capture cross section with {Delta}E = 0.37 eV anneals out at about 110 C{sup o}. The other component, with {Delta}E = 0.50 eV is thermally stable even above 170 C{sup o}. (author). 13 refs., 17 figs., 2 tabs.
M assarani, B;
Awad, F;
Kaaka, M
[1]
- Atomic Energy Commission, Damascus (Syrian Arab Republic). Dept. of Physics
Citation Formats
M assarani, B, Awad, F, and Kaaka, M.
Annealing study of main electron irradiation-induced defects (H{sub 4} and H{sub 5}) in P-In P using DLTS technique.
Syrian Arab Republic: N. p.,
1992.
Web.
M assarani, B, Awad, F, & Kaaka, M.
Annealing study of main electron irradiation-induced defects (H{sub 4} and H{sub 5}) in P-In P using DLTS technique.
Syrian Arab Republic.
M assarani, B, Awad, F, and Kaaka, M.
1992.
"Annealing study of main electron irradiation-induced defects (H{sub 4} and H{sub 5}) in P-In P using DLTS technique."
Syrian Arab Republic.
@misc{etde_10144904,
title = {Annealing study of main electron irradiation-induced defects (H{sub 4} and H{sub 5}) in P-In P using DLTS technique}
author = {M assarani, B, Awad, F, and Kaaka, M}
abstractNote = {Thermal annealing of the two hole traps H{sub 4} and H{sub 5} in room-temperature electron-irradiated In P Schottky diodes was investigated. Electron-irradiation energy ranging between 0.15 and 1.5 MeV with doses ranging between 5 x 10{sup 14} and 10{sup 16} e/cm{sup 2}. DLTS technique with double-phase detector was used in this study. Contrary to what is generally admitted, we found that H{sub 5} anneals out at about 150 C{sup o} with an activation energy of 1 eV. We have shown that H{sub 4} is a complex defect having two components that we could resolve. While the first one, having lower emission cross section and higher capture cross section with {Delta}E = 0.37 eV anneals out at about 110 C{sup o}. The other component, with {Delta}E = 0.50 eV is thermally stable even above 170 C{sup o}. (author). 13 refs., 17 figs., 2 tabs.}
place = {Syrian Arab Republic}
year = {1992}
month = {Dec}
}
title = {Annealing study of main electron irradiation-induced defects (H{sub 4} and H{sub 5}) in P-In P using DLTS technique}
author = {M assarani, B, Awad, F, and Kaaka, M}
abstractNote = {Thermal annealing of the two hole traps H{sub 4} and H{sub 5} in room-temperature electron-irradiated In P Schottky diodes was investigated. Electron-irradiation energy ranging between 0.15 and 1.5 MeV with doses ranging between 5 x 10{sup 14} and 10{sup 16} e/cm{sup 2}. DLTS technique with double-phase detector was used in this study. Contrary to what is generally admitted, we found that H{sub 5} anneals out at about 150 C{sup o} with an activation energy of 1 eV. We have shown that H{sub 4} is a complex defect having two components that we could resolve. While the first one, having lower emission cross section and higher capture cross section with {Delta}E = 0.37 eV anneals out at about 110 C{sup o}. The other component, with {Delta}E = 0.50 eV is thermally stable even above 170 C{sup o}. (author). 13 refs., 17 figs., 2 tabs.}
place = {Syrian Arab Republic}
year = {1992}
month = {Dec}
}