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Liquid phase epitaxy of gallium arsenide - a review

Abstract

Liquid phase epitaxy of gallium arsenide has been investigated intensively from the late 1960`s to the present and has now a special place in the manufacture of wide band, compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades, the authors point out that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point of view on how this subject developed. 70 refs., 5 figs.
Publication Date:
Jul 01, 1992
Product Type:
Technical Report
Report Number:
ANSTO-E-702
Reference Number:
SCA: 360601; PA: AIX-24:035443; SN: 93000976634
Resource Relation:
Other Information: PBD: Jul 1992
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; EPITAXY; RADIATION DETECTORS; FABRICATION; CRYSTAL GROWTH; DOPED MATERIALS; EXPERIMENTAL DATA; IMPURITIES; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; REVIEWS; 360601; PREPARATION AND MANUFACTURE
OSTI ID:
10144601
Research Organizations:
Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)
Country of Origin:
Australia
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 1030-7745; Other: ON: DE93622212; TRN: AU9213085035443
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
INIS
Size:
[20] p.
Announcement Date:
Jul 05, 2005

Citation Formats

Alexiev, D, Edmondson, M, Butcher, K S.A., and Tansley, T. Liquid phase epitaxy of gallium arsenide - a review. Australia: N. p., 1992. Web.
Alexiev, D, Edmondson, M, Butcher, K S.A., & Tansley, T. Liquid phase epitaxy of gallium arsenide - a review. Australia.
Alexiev, D, Edmondson, M, Butcher, K S.A., and Tansley, T. 1992. "Liquid phase epitaxy of gallium arsenide - a review." Australia.
@misc{etde_10144601,
title = {Liquid phase epitaxy of gallium arsenide - a review}
author = {Alexiev, D, Edmondson, M, Butcher, K S.A., and Tansley, T}
abstractNote = {Liquid phase epitaxy of gallium arsenide has been investigated intensively from the late 1960`s to the present and has now a special place in the manufacture of wide band, compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades, the authors point out that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point of view on how this subject developed. 70 refs., 5 figs.}
place = {Australia}
year = {1992}
month = {Jul}
}