Abstract
The disorder effects on the electronic properties of silicon carbide were studied at the atomic or micro-structural scale. We have investigated a great variety of materials: silicon carbide fibers, carbonated amorphous silicon films, single crystals and amorphous or crystalline SiC powders. The DC and AC conductivity measurements on the SiC fibers point out the major role of their micro-structure at the nanometric scale, which leads to large dielectric constants. Hopping of polaronic carriers is the dominant conduction mechanism. An electrons spin resonance study of all the materials was performed: sp{sup 2} hybridized carbon is always present, in diluted form in the amorphous systems or as free carbon in the crystalline one. Some irradiation defects of SiC were identified: silicon or carbon vacancy and carbon complexes with sp{sup 2} hybridization. Such a carbon is responsible of the low paramagnetic stability of the silicon dangling bonds. It is believed to induce the polaronic behavior of the localized carriers. (Author). refs., figs., tabs.
Citation Formats
Chauvet, O.
Electronic properties of disordered silicon carbides; Proprietes electroniques des carbures de silicium desordonnes.
France: N. p.,
1991.
Web.
Chauvet, O.
Electronic properties of disordered silicon carbides; Proprietes electroniques des carbures de silicium desordonnes.
France.
Chauvet, O.
1991.
"Electronic properties of disordered silicon carbides; Proprietes electroniques des carbures de silicium desordonnes."
France.
@misc{etde_10144599,
title = {Electronic properties of disordered silicon carbides; Proprietes electroniques des carbures de silicium desordonnes}
author = {Chauvet, O}
abstractNote = {The disorder effects on the electronic properties of silicon carbide were studied at the atomic or micro-structural scale. We have investigated a great variety of materials: silicon carbide fibers, carbonated amorphous silicon films, single crystals and amorphous or crystalline SiC powders. The DC and AC conductivity measurements on the SiC fibers point out the major role of their micro-structure at the nanometric scale, which leads to large dielectric constants. Hopping of polaronic carriers is the dominant conduction mechanism. An electrons spin resonance study of all the materials was performed: sp{sup 2} hybridized carbon is always present, in diluted form in the amorphous systems or as free carbon in the crystalline one. Some irradiation defects of SiC were identified: silicon or carbon vacancy and carbon complexes with sp{sup 2} hybridization. Such a carbon is responsible of the low paramagnetic stability of the silicon dangling bonds. It is believed to induce the polaronic behavior of the localized carriers. (Author). refs., figs., tabs.}
place = {France}
year = {1991}
month = {May}
}
title = {Electronic properties of disordered silicon carbides; Proprietes electroniques des carbures de silicium desordonnes}
author = {Chauvet, O}
abstractNote = {The disorder effects on the electronic properties of silicon carbide were studied at the atomic or micro-structural scale. We have investigated a great variety of materials: silicon carbide fibers, carbonated amorphous silicon films, single crystals and amorphous or crystalline SiC powders. The DC and AC conductivity measurements on the SiC fibers point out the major role of their micro-structure at the nanometric scale, which leads to large dielectric constants. Hopping of polaronic carriers is the dominant conduction mechanism. An electrons spin resonance study of all the materials was performed: sp{sup 2} hybridized carbon is always present, in diluted form in the amorphous systems or as free carbon in the crystalline one. Some irradiation defects of SiC were identified: silicon or carbon vacancy and carbon complexes with sp{sup 2} hybridization. Such a carbon is responsible of the low paramagnetic stability of the silicon dangling bonds. It is believed to induce the polaronic behavior of the localized carriers. (Author). refs., figs., tabs.}
place = {France}
year = {1991}
month = {May}
}