Abstract
This paper proposes a new, simple model to analyze capacitance measurements on undoped a-Si:H Schottky diodes. According to this model it is possible to obtain important physical parameters by performing capacitance vs dc potential measurements at different temperatures. It is shown that it is also possible to predict the limitations of other commonly used models.
Citation Formats
Rubino, A, Buitrago, R, Besi Vetrella, U, and Terzini, E.
Interpretation of capacitance measurements on undoped a-Si:H.
Italy: N. p.,
1992.
Web.
Rubino, A, Buitrago, R, Besi Vetrella, U, & Terzini, E.
Interpretation of capacitance measurements on undoped a-Si:H.
Italy.
Rubino, A, Buitrago, R, Besi Vetrella, U, and Terzini, E.
1992.
"Interpretation of capacitance measurements on undoped a-Si:H."
Italy.
@misc{etde_10139457,
title = {Interpretation of capacitance measurements on undoped a-Si:H}
author = {Rubino, A, Buitrago, R, Besi Vetrella, U, and Terzini, E}
abstractNote = {This paper proposes a new, simple model to analyze capacitance measurements on undoped a-Si:H Schottky diodes. According to this model it is possible to obtain important physical parameters by performing capacitance vs dc potential measurements at different temperatures. It is shown that it is also possible to predict the limitations of other commonly used models.}
place = {Italy}
year = {1992}
month = {Dec}
}
title = {Interpretation of capacitance measurements on undoped a-Si:H}
author = {Rubino, A, Buitrago, R, Besi Vetrella, U, and Terzini, E}
abstractNote = {This paper proposes a new, simple model to analyze capacitance measurements on undoped a-Si:H Schottky diodes. According to this model it is possible to obtain important physical parameters by performing capacitance vs dc potential measurements at different temperatures. It is shown that it is also possible to predict the limitations of other commonly used models.}
place = {Italy}
year = {1992}
month = {Dec}
}