Abstract
Within the framework of research on highly conductive contact layers for silicon solar cells, phosphorous doped microcrystalline silicon thin films were prepared by glow discharge at very low power density, starting from a hydrogen diluted silane/phosphine mixture. Dark conductivities as high as 41 S/cm, 75 A crystallite dimensions and 60 per cent crystalline volume fraction were measured. The film structure showed a cluster organisation of the crystalline grains. Conductivity measurements as a function of temperature were performed and activation energies in the range, 20-30 meV, have been obtained. A change in the slope of the Meyer-Neldel plot was found and explained by the attenuation of the Fermi level statistical shift; in this picture, the increased carrier density is responsible for the rising of the conductivity prefactor at low activation energies, as well as, for the sharp increase of the room temperature conductivity.
Citation Formats
Conte, G, Terzini, E, Addonizio, M L, Garozzo, M, Rubino, A, Sinno, G, Loreti, S, and Alessandrini, P.
Low power deposition of highly conductive nc-Si:H layer.
Italy: N. p.,
1992.
Web.
Conte, G, Terzini, E, Addonizio, M L, Garozzo, M, Rubino, A, Sinno, G, Loreti, S, & Alessandrini, P.
Low power deposition of highly conductive nc-Si:H layer.
Italy.
Conte, G, Terzini, E, Addonizio, M L, Garozzo, M, Rubino, A, Sinno, G, Loreti, S, and Alessandrini, P.
1992.
"Low power deposition of highly conductive nc-Si:H layer."
Italy.
@misc{etde_10139448,
title = {Low power deposition of highly conductive nc-Si:H layer}
author = {Conte, G, Terzini, E, Addonizio, M L, Garozzo, M, Rubino, A, Sinno, G, Loreti, S, and Alessandrini, P}
abstractNote = {Within the framework of research on highly conductive contact layers for silicon solar cells, phosphorous doped microcrystalline silicon thin films were prepared by glow discharge at very low power density, starting from a hydrogen diluted silane/phosphine mixture. Dark conductivities as high as 41 S/cm, 75 A crystallite dimensions and 60 per cent crystalline volume fraction were measured. The film structure showed a cluster organisation of the crystalline grains. Conductivity measurements as a function of temperature were performed and activation energies in the range, 20-30 meV, have been obtained. A change in the slope of the Meyer-Neldel plot was found and explained by the attenuation of the Fermi level statistical shift; in this picture, the increased carrier density is responsible for the rising of the conductivity prefactor at low activation energies, as well as, for the sharp increase of the room temperature conductivity.}
place = {Italy}
year = {1992}
month = {Dec}
}
title = {Low power deposition of highly conductive nc-Si:H layer}
author = {Conte, G, Terzini, E, Addonizio, M L, Garozzo, M, Rubino, A, Sinno, G, Loreti, S, and Alessandrini, P}
abstractNote = {Within the framework of research on highly conductive contact layers for silicon solar cells, phosphorous doped microcrystalline silicon thin films were prepared by glow discharge at very low power density, starting from a hydrogen diluted silane/phosphine mixture. Dark conductivities as high as 41 S/cm, 75 A crystallite dimensions and 60 per cent crystalline volume fraction were measured. The film structure showed a cluster organisation of the crystalline grains. Conductivity measurements as a function of temperature were performed and activation energies in the range, 20-30 meV, have been obtained. A change in the slope of the Meyer-Neldel plot was found and explained by the attenuation of the Fermi level statistical shift; in this picture, the increased carrier density is responsible for the rising of the conductivity prefactor at low activation energies, as well as, for the sharp increase of the room temperature conductivity.}
place = {Italy}
year = {1992}
month = {Dec}
}