Abstract
Boron and phosphorus doped high conductivity microcrystalline thin films were deposited in a PECVD reactor. This paper reports conductivities as high as 3 and 41 S/cm for B and P doped materials respectively on films deposited at 210 degrees C. The conductivity, as well as, the microcrystalline fraction increase for the n layer with decreasing RF power, while, for the p material, an increase of power is needed to improve the film characteristics. The conductivity prefactor, as well as, the conductivity itself as a function of the activation energy show a slope inversion for both n and p materials at an activation energy of about 40 meV and 80 meV respectively. Different possible transport mechanisms are examined in order to explain the experimental data.
Rubino, A;
Addonizio, M L;
Conte, G;
Nobile, G;
Terzini, E;
[1]
Madan, A
[2]
- ENEA, Portici (Italy). Centro Ricerche Fotovoltaiche
- MVSystems Inc., Golden, CO (United States)
Citation Formats
Rubino, A, Addonizio, M L, Conte, G, Nobile, G, Terzini, E, and Madan, A.
Physical properties of P and B doped microcrystalline SI:H deposited by PECVD.
Italy: N. p.,
1993.
Web.
Rubino, A, Addonizio, M L, Conte, G, Nobile, G, Terzini, E, & Madan, A.
Physical properties of P and B doped microcrystalline SI:H deposited by PECVD.
Italy.
Rubino, A, Addonizio, M L, Conte, G, Nobile, G, Terzini, E, and Madan, A.
1993.
"Physical properties of P and B doped microcrystalline SI:H deposited by PECVD."
Italy.
@misc{etde_10137781,
title = {Physical properties of P and B doped microcrystalline SI:H deposited by PECVD}
author = {Rubino, A, Addonizio, M L, Conte, G, Nobile, G, Terzini, E, and Madan, A}
abstractNote = {Boron and phosphorus doped high conductivity microcrystalline thin films were deposited in a PECVD reactor. This paper reports conductivities as high as 3 and 41 S/cm for B and P doped materials respectively on films deposited at 210 degrees C. The conductivity, as well as, the microcrystalline fraction increase for the n layer with decreasing RF power, while, for the p material, an increase of power is needed to improve the film characteristics. The conductivity prefactor, as well as, the conductivity itself as a function of the activation energy show a slope inversion for both n and p materials at an activation energy of about 40 meV and 80 meV respectively. Different possible transport mechanisms are examined in order to explain the experimental data.}
place = {Italy}
year = {1993}
month = {Dec}
}
title = {Physical properties of P and B doped microcrystalline SI:H deposited by PECVD}
author = {Rubino, A, Addonizio, M L, Conte, G, Nobile, G, Terzini, E, and Madan, A}
abstractNote = {Boron and phosphorus doped high conductivity microcrystalline thin films were deposited in a PECVD reactor. This paper reports conductivities as high as 3 and 41 S/cm for B and P doped materials respectively on films deposited at 210 degrees C. The conductivity, as well as, the microcrystalline fraction increase for the n layer with decreasing RF power, while, for the p material, an increase of power is needed to improve the film characteristics. The conductivity prefactor, as well as, the conductivity itself as a function of the activation energy show a slope inversion for both n and p materials at an activation energy of about 40 meV and 80 meV respectively. Different possible transport mechanisms are examined in order to explain the experimental data.}
place = {Italy}
year = {1993}
month = {Dec}
}