Abstract
Ground state energies of shallow states of donor impurities on cosine-shaped, periodically structured interfaces formed by two semiconductors, such as GaAs/Ga{sub 1-x}Al{sub x}As and Si/SiO{sub 2} interfaces, are calculated variationally with the approximation that interfaces represent infinitely high potential barriers. The results show that the ground state energies of interface impurity states are strongly affected by interface structures in GaAs/Ga{sub 1-x}Al{sub x}As Lateral-Surface-Superlattices produced by Molecular-Beam-Epitaxy growth of AlAs/GaAs fractional-layer superlattices on (001) vicinal GaAs substrates, while effects of interface defects on interface impurity states are negligible for Si/SiO{sub 2} interfaces when the density of interface defects is less than 10{sup 10}/cm{sup 2}. (author). 26 refs, 1 fig., 1 tab.
Sun, Hong;
[1]
Shiwei, Gu
[2]
- International Centre for Theoretical Physics, Trieste (Italy)
- Jiao Tong Univ., Shanghai (China). Dept. of Physics
Citation Formats
Sun, Hong, and Shiwei, Gu.
Shallow states of donor impurities on periodically structured semiconductors interfaces.
IAEA: N. p.,
1991.
Web.
Sun, Hong, & Shiwei, Gu.
Shallow states of donor impurities on periodically structured semiconductors interfaces.
IAEA.
Sun, Hong, and Shiwei, Gu.
1991.
"Shallow states of donor impurities on periodically structured semiconductors interfaces."
IAEA.
@misc{etde_10132902,
title = {Shallow states of donor impurities on periodically structured semiconductors interfaces}
author = {Sun, Hong, and Shiwei, Gu}
abstractNote = {Ground state energies of shallow states of donor impurities on cosine-shaped, periodically structured interfaces formed by two semiconductors, such as GaAs/Ga{sub 1-x}Al{sub x}As and Si/SiO{sub 2} interfaces, are calculated variationally with the approximation that interfaces represent infinitely high potential barriers. The results show that the ground state energies of interface impurity states are strongly affected by interface structures in GaAs/Ga{sub 1-x}Al{sub x}As Lateral-Surface-Superlattices produced by Molecular-Beam-Epitaxy growth of AlAs/GaAs fractional-layer superlattices on (001) vicinal GaAs substrates, while effects of interface defects on interface impurity states are negligible for Si/SiO{sub 2} interfaces when the density of interface defects is less than 10{sup 10}/cm{sup 2}. (author). 26 refs, 1 fig., 1 tab.}
place = {IAEA}
year = {1991}
month = {Sep}
}
title = {Shallow states of donor impurities on periodically structured semiconductors interfaces}
author = {Sun, Hong, and Shiwei, Gu}
abstractNote = {Ground state energies of shallow states of donor impurities on cosine-shaped, periodically structured interfaces formed by two semiconductors, such as GaAs/Ga{sub 1-x}Al{sub x}As and Si/SiO{sub 2} interfaces, are calculated variationally with the approximation that interfaces represent infinitely high potential barriers. The results show that the ground state energies of interface impurity states are strongly affected by interface structures in GaAs/Ga{sub 1-x}Al{sub x}As Lateral-Surface-Superlattices produced by Molecular-Beam-Epitaxy growth of AlAs/GaAs fractional-layer superlattices on (001) vicinal GaAs substrates, while effects of interface defects on interface impurity states are negligible for Si/SiO{sub 2} interfaces when the density of interface defects is less than 10{sup 10}/cm{sup 2}. (author). 26 refs, 1 fig., 1 tab.}
place = {IAEA}
year = {1991}
month = {Sep}
}