Abstract
A process photometer for the near infrared is designed taking into account the spectral properties of eligible heteropolar molecular compounds as well as the properties exhibited by commercially available diode lasers for communication engineering at 1.3 and 1.5 {mu}m, respectively. Compared with the conventional systems, this new process photometer has a high selectivity. Two frequency tuning methods are investigated. On the basis of the values measured, the method suitable for the InGaAs(P) diode lasers is determined. This method is then compared with that used for cooled lead salt diode lasers. A special method for the calculation of the hydrogen fluoride concentration with a reduced expenditure is examined for the occurrence of an additional water absorption line. This method is based on the use of the computer already incorporated in the analog device version. Subsequently, the analog device unit tested under operating conditions in the stack of our industrial cooperation partner is described. By means of error assessment, a 1{sigma} standard deviation of 0.066 mg HF/Ncbm is obtained for this version in case of a 100-h measurement. The lower limit of detection of photometer systems with thermal optical sources is 36 mg HF/Ncbm. When using the diode laser photometer presented in
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Citation Formats
Cerff, K.
Diode laser photometer for process gas analysis in the near infrared; Diodenlaserphotometer im Nahen Infrarot fuer die Prozessanalyse.
Germany: N. p.,
1991.
Web.
Cerff, K.
Diode laser photometer for process gas analysis in the near infrared; Diodenlaserphotometer im Nahen Infrarot fuer die Prozessanalyse.
Germany.
Cerff, K.
1991.
"Diode laser photometer for process gas analysis in the near infrared; Diodenlaserphotometer im Nahen Infrarot fuer die Prozessanalyse."
Germany.
@misc{etde_10129959,
title = {Diode laser photometer for process gas analysis in the near infrared; Diodenlaserphotometer im Nahen Infrarot fuer die Prozessanalyse}
author = {Cerff, K}
abstractNote = {A process photometer for the near infrared is designed taking into account the spectral properties of eligible heteropolar molecular compounds as well as the properties exhibited by commercially available diode lasers for communication engineering at 1.3 and 1.5 {mu}m, respectively. Compared with the conventional systems, this new process photometer has a high selectivity. Two frequency tuning methods are investigated. On the basis of the values measured, the method suitable for the InGaAs(P) diode lasers is determined. This method is then compared with that used for cooled lead salt diode lasers. A special method for the calculation of the hydrogen fluoride concentration with a reduced expenditure is examined for the occurrence of an additional water absorption line. This method is based on the use of the computer already incorporated in the analog device version. Subsequently, the analog device unit tested under operating conditions in the stack of our industrial cooperation partner is described. By means of error assessment, a 1{sigma} standard deviation of 0.066 mg HF/Ncbm is obtained for this version in case of a 100-h measurement. The lower limit of detection of photometer systems with thermal optical sources is 36 mg HF/Ncbm. When using the diode laser photometer presented in this report, this value is reduced to 0.5 mg/Ncbm. (orig./BBR). [Deutsch] Die Konzeption eines gegenueber herkoemmlichen Systemen hochselektiven Prozessphotometers fuer den spektralen Bereich des Nahen Infrarot wird in Abhaengigkeit von den spektralen Eigenschaften der in Frage kommenden heteropolaren Molekuelverbindungen sowie den Eigenschaften der kommerziell verfuegbaren Diodenlaser der Nachrichtentechnik bei 1.3 und 1.5 {mu}m erarbeitet. Zwei Frequenzabstimmverfahren werden untersucht, anhand von Messungen wird das fuer die InGaAs(P)-Diodenlaser geeignete Verfahren ermittelt und gegenueber demjenigen fuer gekuehlte Bleisalz-Diodenlaser abgegrenzt. Ein spezielles Verfahren zur aufwandreduzierten Berechnung der Fluorwasserstoff-Konzentration, mit dem bereits in der analogen Geraeteversion eingebauten Rechner, wird fuer den Fall des Auftretens einer zusaetzlichen Wasserabsorptionslinie untersucht. Es folgt die Systembeschreibung der am Kamin des industriellen Kooperationspartners im Einsatz von zwei Jahren erprobten, analogen Geraeteversion. Die Fehlerabschaetzung ergibt fuer diese Version eine 1{sigma}-Standardabweichung von 0.066 mg HF/Ncbm fuer die Einhundert-Stunden-Messung, die untere Nachweisempfindlichkeit erniedrigt sich von 36 mg HF/Ncbm bei Photometersystemen mit thermischen Strahlen auf 0.5 mg HF/Ncbm beim hier vorgestellten Diodenlaserphotometer. (orig./BBR).}
place = {Germany}
year = {1991}
month = {Sep}
}
title = {Diode laser photometer for process gas analysis in the near infrared; Diodenlaserphotometer im Nahen Infrarot fuer die Prozessanalyse}
author = {Cerff, K}
abstractNote = {A process photometer for the near infrared is designed taking into account the spectral properties of eligible heteropolar molecular compounds as well as the properties exhibited by commercially available diode lasers for communication engineering at 1.3 and 1.5 {mu}m, respectively. Compared with the conventional systems, this new process photometer has a high selectivity. Two frequency tuning methods are investigated. On the basis of the values measured, the method suitable for the InGaAs(P) diode lasers is determined. This method is then compared with that used for cooled lead salt diode lasers. A special method for the calculation of the hydrogen fluoride concentration with a reduced expenditure is examined for the occurrence of an additional water absorption line. This method is based on the use of the computer already incorporated in the analog device version. Subsequently, the analog device unit tested under operating conditions in the stack of our industrial cooperation partner is described. By means of error assessment, a 1{sigma} standard deviation of 0.066 mg HF/Ncbm is obtained for this version in case of a 100-h measurement. The lower limit of detection of photometer systems with thermal optical sources is 36 mg HF/Ncbm. When using the diode laser photometer presented in this report, this value is reduced to 0.5 mg/Ncbm. (orig./BBR). [Deutsch] Die Konzeption eines gegenueber herkoemmlichen Systemen hochselektiven Prozessphotometers fuer den spektralen Bereich des Nahen Infrarot wird in Abhaengigkeit von den spektralen Eigenschaften der in Frage kommenden heteropolaren Molekuelverbindungen sowie den Eigenschaften der kommerziell verfuegbaren Diodenlaser der Nachrichtentechnik bei 1.3 und 1.5 {mu}m erarbeitet. Zwei Frequenzabstimmverfahren werden untersucht, anhand von Messungen wird das fuer die InGaAs(P)-Diodenlaser geeignete Verfahren ermittelt und gegenueber demjenigen fuer gekuehlte Bleisalz-Diodenlaser abgegrenzt. Ein spezielles Verfahren zur aufwandreduzierten Berechnung der Fluorwasserstoff-Konzentration, mit dem bereits in der analogen Geraeteversion eingebauten Rechner, wird fuer den Fall des Auftretens einer zusaetzlichen Wasserabsorptionslinie untersucht. Es folgt die Systembeschreibung der am Kamin des industriellen Kooperationspartners im Einsatz von zwei Jahren erprobten, analogen Geraeteversion. Die Fehlerabschaetzung ergibt fuer diese Version eine 1{sigma}-Standardabweichung von 0.066 mg HF/Ncbm fuer die Einhundert-Stunden-Messung, die untere Nachweisempfindlichkeit erniedrigt sich von 36 mg HF/Ncbm bei Photometersystemen mit thermischen Strahlen auf 0.5 mg HF/Ncbm beim hier vorgestellten Diodenlaserphotometer. (orig./BBR).}
place = {Germany}
year = {1991}
month = {Sep}
}