Abstract
In this work the growth of thin films of the high-temperature superconductor YBa{sub 2}Cu{sub 3}O{sub 7-x} on Si(001) substrates has been investigated by Rutherford backscattering, channeling, X-ray diffraction, high resolution transmission electron microscopy, and electrical measurements. Epitaxial buffer layers of electrically insulating, pure and yttria-stabilized ZrO{sub 2} ([Y{sub 2}O{sub 3}]{sub 0.06}[ZrO{sub 2}]{sub 0.94} = YSZ) as well as of metallic CoSi{sub 2} were employed to largely prevent the interdiffusion and chemical reaction between the superconductor film and the substrate in spite of the high deposition temperatures of the YBa{sub 2}Cu{sub 3}O{sub 7-x} in the range of 600 to 800deg C. (orig.).
Citation Formats
Lubig, A.
Epataxial growth of the high-temperature superconductors YBa{sub 2}Cu{sub 3}O{sub 7-x} on silicon single crystals with buffer layers; Epitaktisches Wachstum des Hochtemperatursupraleiters YBA{sub 2}Cu{sub 3}O{sub 7-x} auf Silizium-einkristallen mit Pufferschichten.
Germany: N. p.,
1991.
Web.
Lubig, A.
Epataxial growth of the high-temperature superconductors YBa{sub 2}Cu{sub 3}O{sub 7-x} on silicon single crystals with buffer layers; Epitaktisches Wachstum des Hochtemperatursupraleiters YBA{sub 2}Cu{sub 3}O{sub 7-x} auf Silizium-einkristallen mit Pufferschichten.
Germany.
Lubig, A.
1991.
"Epataxial growth of the high-temperature superconductors YBa{sub 2}Cu{sub 3}O{sub 7-x} on silicon single crystals with buffer layers; Epitaktisches Wachstum des Hochtemperatursupraleiters YBA{sub 2}Cu{sub 3}O{sub 7-x} auf Silizium-einkristallen mit Pufferschichten."
Germany.
@misc{etde_10129272,
title = {Epataxial growth of the high-temperature superconductors YBa{sub 2}Cu{sub 3}O{sub 7-x} on silicon single crystals with buffer layers; Epitaktisches Wachstum des Hochtemperatursupraleiters YBA{sub 2}Cu{sub 3}O{sub 7-x} auf Silizium-einkristallen mit Pufferschichten}
author = {Lubig, A}
abstractNote = {In this work the growth of thin films of the high-temperature superconductor YBa{sub 2}Cu{sub 3}O{sub 7-x} on Si(001) substrates has been investigated by Rutherford backscattering, channeling, X-ray diffraction, high resolution transmission electron microscopy, and electrical measurements. Epitaxial buffer layers of electrically insulating, pure and yttria-stabilized ZrO{sub 2} ([Y{sub 2}O{sub 3}]{sub 0.06}[ZrO{sub 2}]{sub 0.94} = YSZ) as well as of metallic CoSi{sub 2} were employed to largely prevent the interdiffusion and chemical reaction between the superconductor film and the substrate in spite of the high deposition temperatures of the YBa{sub 2}Cu{sub 3}O{sub 7-x} in the range of 600 to 800deg C. (orig.).}
place = {Germany}
year = {1991}
month = {Sep}
}
title = {Epataxial growth of the high-temperature superconductors YBa{sub 2}Cu{sub 3}O{sub 7-x} on silicon single crystals with buffer layers; Epitaktisches Wachstum des Hochtemperatursupraleiters YBA{sub 2}Cu{sub 3}O{sub 7-x} auf Silizium-einkristallen mit Pufferschichten}
author = {Lubig, A}
abstractNote = {In this work the growth of thin films of the high-temperature superconductor YBa{sub 2}Cu{sub 3}O{sub 7-x} on Si(001) substrates has been investigated by Rutherford backscattering, channeling, X-ray diffraction, high resolution transmission electron microscopy, and electrical measurements. Epitaxial buffer layers of electrically insulating, pure and yttria-stabilized ZrO{sub 2} ([Y{sub 2}O{sub 3}]{sub 0.06}[ZrO{sub 2}]{sub 0.94} = YSZ) as well as of metallic CoSi{sub 2} were employed to largely prevent the interdiffusion and chemical reaction between the superconductor film and the substrate in spite of the high deposition temperatures of the YBa{sub 2}Cu{sub 3}O{sub 7-x} in the range of 600 to 800deg C. (orig.).}
place = {Germany}
year = {1991}
month = {Sep}
}