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Bolometer development, with simultaneous measurement of heat and ionisation signals, at Saclay

Abstract

We report the latest developments of our work on bolometers. Low noise readout simultaneously in charge and heat channel was achieved. Tests were conducted using a 7 g bolometer built in Berkeley. Baseline widths 350 eV (1{sigma}, phonon) and 1 keV (1{sigma}, ionisation) were measured. But the 60 keV phonon width was found to be significantly larger than the baseline width. Also the amplitude of ionisation signal was found to drift with time. This time effect motivated a detailed study of ionisation detectors at very low temperatures. Behavior of PIN silicon diodes (Hamamatsu) was investigated from room temperature to 3 K. First results are shown. (author). 9 refs., 4 figs.
Authors:
Yvon, D; Wang, N; Chardin, G; [1]  Leveque, P; L`Hote, D; Pari, P; Guerrier, G; [2]  Chapellier, M; Soudee, J [2] 
  1. CEA Centre d`Etudes de Saclay, 91 - Gif-sur-Yvette (France). Dept. d`Astrophysique, de la Physique des Particules, de la Physique Nucleaire et de l`Instrumentation Associee
  2. CEA Centre d`Etudes de Saclay, 91 - Gif-sur-Yvette (France). Dept. de Recherche sur l`Etat Condense, les Atomes et les Molecules
Publication Date:
Aug 01, 1993
Product Type:
Conference
Report Number:
CEA-DAPNIA-SPP-93-11; CONF-930751-
Reference Number:
SCA: 440104; PA: AIX-25:011161; EDB-94:039389; ERA-19:010154; NTS-94:015720; SN: 94001152436
Resource Relation:
Conference: 5. international workshop on low temperature detectors,Berkeley, CA (United States),29 Jul - 3 Aug 1993; Other Information: PBD: Aug 1993
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; BOLOMETERS; TESTING; NONLUMINOUS MATTER; CEA SACLAY; PHONONS; SILICON DIODES; TEMPERATURE RANGE 0000-0013 K; 440104; HIGH ENERGY PHYSICS INSTRUMENTATION
OSTI ID:
10128901
Research Organizations:
CEA Centre d`Etudes de Saclay, 91 - Gif-sur-Yvette (France). Dept. d`Astrophysique, de la Physique des Particules, de la Physique Nucleaire et de l`Instrumentation Associee
Country of Origin:
France
Language:
English
Other Identifying Numbers:
Other: ON: DE94613961; TRN: FR9400544011161
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
FRN
Size:
6 p.
Announcement Date:
Mar 08, 1994

Citation Formats

Yvon, D, Wang, N, Chardin, G, Leveque, P, L`Hote, D, Pari, P, Guerrier, G, Chapellier, M, and Soudee, J. Bolometer development, with simultaneous measurement of heat and ionisation signals, at Saclay. France: N. p., 1993. Web.
Yvon, D, Wang, N, Chardin, G, Leveque, P, L`Hote, D, Pari, P, Guerrier, G, Chapellier, M, & Soudee, J. Bolometer development, with simultaneous measurement of heat and ionisation signals, at Saclay. France.
Yvon, D, Wang, N, Chardin, G, Leveque, P, L`Hote, D, Pari, P, Guerrier, G, Chapellier, M, and Soudee, J. 1993. "Bolometer development, with simultaneous measurement of heat and ionisation signals, at Saclay." France.
@misc{etde_10128901,
title = {Bolometer development, with simultaneous measurement of heat and ionisation signals, at Saclay}
author = {Yvon, D, Wang, N, Chardin, G, Leveque, P, L`Hote, D, Pari, P, Guerrier, G, Chapellier, M, and Soudee, J}
abstractNote = {We report the latest developments of our work on bolometers. Low noise readout simultaneously in charge and heat channel was achieved. Tests were conducted using a 7 g bolometer built in Berkeley. Baseline widths 350 eV (1{sigma}, phonon) and 1 keV (1{sigma}, ionisation) were measured. But the 60 keV phonon width was found to be significantly larger than the baseline width. Also the amplitude of ionisation signal was found to drift with time. This time effect motivated a detailed study of ionisation detectors at very low temperatures. Behavior of PIN silicon diodes (Hamamatsu) was investigated from room temperature to 3 K. First results are shown. (author). 9 refs., 4 figs.}
place = {France}
year = {1993}
month = {Aug}
}