Abstract
The transport and recombination in hydrogenated amorphous silicon (a-Si:H) pin-diodes is investigated by its forward current densities, electroluminescence and optical properties. The diodes mainly consist of p-doped (p), intrinsic (i) and n-doped (n) amorphous silicon layers. The EL-quantum efficiency is constant at increasing forward bias, i.e. the current is a pure recombination current. Time resolved measurements reveal the following: After applying a rectangular voltage pulse a space charge limited current is followed by a double injection recombination current with a delay time. The dependence of the delay time on various parameters, e.g. the puls repetition rate, the temperature and the voltage between the pulses is discussed in this work. Simultaneously transients of the electroluminescence were measured, which show the beginning of the recombination with a certain delay time. These delay times are a measure of the average radiative lifetime (about 1 {mu}s at room temperature). The nonradiative lifetime can be calculated being less than 1 ns by taking the low quantum efficiency. (orig./MM) [Deutsch] Das Ziel der Arbeit ist die Untersuchung des Ladungstraegertransports und der Rekombination in Dioden aus wasserstoffhaltigem amorphem Silizium (a-Si:H). Dazu wurden die Dioden durch ihre Vorwaertsstroeme, Elektrolumineszenz (EL) und ihre optischen Eigenschaften charakterisiert. Die Dioden bestehen
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Citation Formats
Becker, F.
Charge transport and recombination investigations in hydrogenated amorphous silicon (a:Si:H) pin diodes by its forward current mode; Ladungstraegertransport- und Rekombinationsuntersuchungen an pin-Dioden aus amorphem Silizium (a-Si:H) im Vorwaertsstrombetrieb.
Germany: N. p.,
1994.
Web.
Becker, F.
Charge transport and recombination investigations in hydrogenated amorphous silicon (a:Si:H) pin diodes by its forward current mode; Ladungstraegertransport- und Rekombinationsuntersuchungen an pin-Dioden aus amorphem Silizium (a-Si:H) im Vorwaertsstrombetrieb.
Germany.
Becker, F.
1994.
"Charge transport and recombination investigations in hydrogenated amorphous silicon (a:Si:H) pin diodes by its forward current mode; Ladungstraegertransport- und Rekombinationsuntersuchungen an pin-Dioden aus amorphem Silizium (a-Si:H) im Vorwaertsstrombetrieb."
Germany.
@misc{etde_10128666,
title = {Charge transport and recombination investigations in hydrogenated amorphous silicon (a:Si:H) pin diodes by its forward current mode; Ladungstraegertransport- und Rekombinationsuntersuchungen an pin-Dioden aus amorphem Silizium (a-Si:H) im Vorwaertsstrombetrieb}
author = {Becker, F}
abstractNote = {The transport and recombination in hydrogenated amorphous silicon (a-Si:H) pin-diodes is investigated by its forward current densities, electroluminescence and optical properties. The diodes mainly consist of p-doped (p), intrinsic (i) and n-doped (n) amorphous silicon layers. The EL-quantum efficiency is constant at increasing forward bias, i.e. the current is a pure recombination current. Time resolved measurements reveal the following: After applying a rectangular voltage pulse a space charge limited current is followed by a double injection recombination current with a delay time. The dependence of the delay time on various parameters, e.g. the puls repetition rate, the temperature and the voltage between the pulses is discussed in this work. Simultaneously transients of the electroluminescence were measured, which show the beginning of the recombination with a certain delay time. These delay times are a measure of the average radiative lifetime (about 1 {mu}s at room temperature). The nonradiative lifetime can be calculated being less than 1 ns by taking the low quantum efficiency. (orig./MM) [Deutsch] Das Ziel der Arbeit ist die Untersuchung des Ladungstraegertransports und der Rekombination in Dioden aus wasserstoffhaltigem amorphem Silizium (a-Si:H). Dazu wurden die Dioden durch ihre Vorwaertsstroeme, Elektrolumineszenz (EL) und ihre optischen Eigenschaften charakterisiert. Die Dioden bestehen hauptsaechlich aus einer Schichtenfolge aus p-dotiertem (p), undotiertem (i) und n-dotiertem (n) amorphem Silizium. Da die EL-Quantenausbeute mit zunehmender Vorwaertsspannung nicht abnimmt, koennen Ladungstraeger nicht ohne zu rekombinieren durch die Diode gelangen. Zeitaufgeloeste Messungen zeigen bei Anlegen eines Rechteckspannungspulses in Vorwaertsrichtung an die Diode zuerst einen raumladungsbegrenzten Strom, der nach einer Verzoegerungszeit in einen hoeheren Doppelinjektionsstrom mit Rekombination uebergeht. In der Arbeit wird die Abhaengigkeit dieser Zeit von vielen Parametern diskutiert, z.B. von der Pulswiederholrate, der Temperatur und der Spannung zwischen den Pulsen. (orig./MM)}
place = {Germany}
year = {1994}
month = {Jul}
}
title = {Charge transport and recombination investigations in hydrogenated amorphous silicon (a:Si:H) pin diodes by its forward current mode; Ladungstraegertransport- und Rekombinationsuntersuchungen an pin-Dioden aus amorphem Silizium (a-Si:H) im Vorwaertsstrombetrieb}
author = {Becker, F}
abstractNote = {The transport and recombination in hydrogenated amorphous silicon (a-Si:H) pin-diodes is investigated by its forward current densities, electroluminescence and optical properties. The diodes mainly consist of p-doped (p), intrinsic (i) and n-doped (n) amorphous silicon layers. The EL-quantum efficiency is constant at increasing forward bias, i.e. the current is a pure recombination current. Time resolved measurements reveal the following: After applying a rectangular voltage pulse a space charge limited current is followed by a double injection recombination current with a delay time. The dependence of the delay time on various parameters, e.g. the puls repetition rate, the temperature and the voltage between the pulses is discussed in this work. Simultaneously transients of the electroluminescence were measured, which show the beginning of the recombination with a certain delay time. These delay times are a measure of the average radiative lifetime (about 1 {mu}s at room temperature). The nonradiative lifetime can be calculated being less than 1 ns by taking the low quantum efficiency. (orig./MM) [Deutsch] Das Ziel der Arbeit ist die Untersuchung des Ladungstraegertransports und der Rekombination in Dioden aus wasserstoffhaltigem amorphem Silizium (a-Si:H). Dazu wurden die Dioden durch ihre Vorwaertsstroeme, Elektrolumineszenz (EL) und ihre optischen Eigenschaften charakterisiert. Die Dioden bestehen hauptsaechlich aus einer Schichtenfolge aus p-dotiertem (p), undotiertem (i) und n-dotiertem (n) amorphem Silizium. Da die EL-Quantenausbeute mit zunehmender Vorwaertsspannung nicht abnimmt, koennen Ladungstraeger nicht ohne zu rekombinieren durch die Diode gelangen. Zeitaufgeloeste Messungen zeigen bei Anlegen eines Rechteckspannungspulses in Vorwaertsrichtung an die Diode zuerst einen raumladungsbegrenzten Strom, der nach einer Verzoegerungszeit in einen hoeheren Doppelinjektionsstrom mit Rekombination uebergeht. In der Arbeit wird die Abhaengigkeit dieser Zeit von vielen Parametern diskutiert, z.B. von der Pulswiederholrate, der Temperatur und der Spannung zwischen den Pulsen. (orig./MM)}
place = {Germany}
year = {1994}
month = {Jul}
}