Abstract
The paper studies the next generation ultra clean technology for the manufacture of ultra high integrated and ultra high functional electronic devices. To effectively fabricate ultra high performance LSI at a low cost, the first thing to be needed is checking of the capital investment. The equipment cost makes up 74% of the capital investment. It becomes extremely important to reduce the process number by simplification of device structure, to increase operational rates of the equipment, and to reduce the number of the equipment. On the other hand, it is necessary to give the equipment continued cleaning in order to prevent a decrease in yield caused by attachment of foreign substances and to assure quality. It is also necessary to introduce facilities with such high performance as plasma-in-situ cleaning. The paper gives detailed explanations of the future semiconductor manufacturing system and fabrication facilities technology and the technology for the reactive/corrosive particular gas which is expected to be increasingly used for CVD and RIE (Reactive Ion Etching). Detailed explanations are also given of the water evaluation technology, microvibration prevention necessary for ultra microprocessing, the contamination control system and the water surface processing and measuring technology. 606 refs., 600 figs., 80 tabs.
Citation Formats
None.
1992 report on the next generation ultra clean technology for advanced microfabrication; 1992 nendo jisedai ultra clean ka gijutsu ni kansuru chosa kenkyu hokokusho.
Japan: N. p.,
1993.
Web.
None.
1992 report on the next generation ultra clean technology for advanced microfabrication; 1992 nendo jisedai ultra clean ka gijutsu ni kansuru chosa kenkyu hokokusho.
Japan.
None.
1993.
"1992 report on the next generation ultra clean technology for advanced microfabrication; 1992 nendo jisedai ultra clean ka gijutsu ni kansuru chosa kenkyu hokokusho."
Japan.
@misc{etde_10128514,
title = {1992 report on the next generation ultra clean technology for advanced microfabrication; 1992 nendo jisedai ultra clean ka gijutsu ni kansuru chosa kenkyu hokokusho}
author = {None}
abstractNote = {The paper studies the next generation ultra clean technology for the manufacture of ultra high integrated and ultra high functional electronic devices. To effectively fabricate ultra high performance LSI at a low cost, the first thing to be needed is checking of the capital investment. The equipment cost makes up 74% of the capital investment. It becomes extremely important to reduce the process number by simplification of device structure, to increase operational rates of the equipment, and to reduce the number of the equipment. On the other hand, it is necessary to give the equipment continued cleaning in order to prevent a decrease in yield caused by attachment of foreign substances and to assure quality. It is also necessary to introduce facilities with such high performance as plasma-in-situ cleaning. The paper gives detailed explanations of the future semiconductor manufacturing system and fabrication facilities technology and the technology for the reactive/corrosive particular gas which is expected to be increasingly used for CVD and RIE (Reactive Ion Etching). Detailed explanations are also given of the water evaluation technology, microvibration prevention necessary for ultra microprocessing, the contamination control system and the water surface processing and measuring technology. 606 refs., 600 figs., 80 tabs.}
place = {Japan}
year = {1993}
month = {Mar}
}
title = {1992 report on the next generation ultra clean technology for advanced microfabrication; 1992 nendo jisedai ultra clean ka gijutsu ni kansuru chosa kenkyu hokokusho}
author = {None}
abstractNote = {The paper studies the next generation ultra clean technology for the manufacture of ultra high integrated and ultra high functional electronic devices. To effectively fabricate ultra high performance LSI at a low cost, the first thing to be needed is checking of the capital investment. The equipment cost makes up 74% of the capital investment. It becomes extremely important to reduce the process number by simplification of device structure, to increase operational rates of the equipment, and to reduce the number of the equipment. On the other hand, it is necessary to give the equipment continued cleaning in order to prevent a decrease in yield caused by attachment of foreign substances and to assure quality. It is also necessary to introduce facilities with such high performance as plasma-in-situ cleaning. The paper gives detailed explanations of the future semiconductor manufacturing system and fabrication facilities technology and the technology for the reactive/corrosive particular gas which is expected to be increasingly used for CVD and RIE (Reactive Ion Etching). Detailed explanations are also given of the water evaluation technology, microvibration prevention necessary for ultra microprocessing, the contamination control system and the water surface processing and measuring technology. 606 refs., 600 figs., 80 tabs.}
place = {Japan}
year = {1993}
month = {Mar}
}