Abstract
The data on influence of electron irradiation conditions (beam intensity - 1-10 mkA, irradiation temperature - 80-400 K, electron energy - 4-14 MeV, fluence) type and concentration of impurities on defects introduction rate in InSb, which are stable at room temperature, and the data on galvanomagnetic properties of InSb with such defects are presented. The results are explained by introduction, interaction and annealing of point defects. Mechanisms of irradiation conditions influence on defect production are analyzed. 84 refs.; 16 figs.; 4 tables. (author).
Citation Formats
Vikhlij, G A, Karpenko, A Ya, Litovchenko, P G, Megela, I G, and Tarabrova, L I.
The influence of irradiation conditions, type and concentration of impurities on radiation defects characteristics in indium antimonide under electron irradiation; Vliyanie uslovij oblucheniya, tipa i kontsentratsii legiruyushchikh primesej na kharakteristiki radiatsionnykh defektov v antimonide indiya pri ehlektronnom obluchenii.
Ukraine: N. p.,
1991.
Web.
Vikhlij, G A, Karpenko, A Ya, Litovchenko, P G, Megela, I G, & Tarabrova, L I.
The influence of irradiation conditions, type and concentration of impurities on radiation defects characteristics in indium antimonide under electron irradiation; Vliyanie uslovij oblucheniya, tipa i kontsentratsii legiruyushchikh primesej na kharakteristiki radiatsionnykh defektov v antimonide indiya pri ehlektronnom obluchenii.
Ukraine.
Vikhlij, G A, Karpenko, A Ya, Litovchenko, P G, Megela, I G, and Tarabrova, L I.
1991.
"The influence of irradiation conditions, type and concentration of impurities on radiation defects characteristics in indium antimonide under electron irradiation; Vliyanie uslovij oblucheniya, tipa i kontsentratsii legiruyushchikh primesej na kharakteristiki radiatsionnykh defektov v antimonide indiya pri ehlektronnom obluchenii."
Ukraine.
@misc{etde_10127690,
title = {The influence of irradiation conditions, type and concentration of impurities on radiation defects characteristics in indium antimonide under electron irradiation; Vliyanie uslovij oblucheniya, tipa i kontsentratsii legiruyushchikh primesej na kharakteristiki radiatsionnykh defektov v antimonide indiya pri ehlektronnom obluchenii}
author = {Vikhlij, G A, Karpenko, A Ya, Litovchenko, P G, Megela, I G, and Tarabrova, L I}
abstractNote = {The data on influence of electron irradiation conditions (beam intensity - 1-10 mkA, irradiation temperature - 80-400 K, electron energy - 4-14 MeV, fluence) type and concentration of impurities on defects introduction rate in InSb, which are stable at room temperature, and the data on galvanomagnetic properties of InSb with such defects are presented. The results are explained by introduction, interaction and annealing of point defects. Mechanisms of irradiation conditions influence on defect production are analyzed. 84 refs.; 16 figs.; 4 tables. (author).}
place = {Ukraine}
year = {1991}
month = {Dec}
}
title = {The influence of irradiation conditions, type and concentration of impurities on radiation defects characteristics in indium antimonide under electron irradiation; Vliyanie uslovij oblucheniya, tipa i kontsentratsii legiruyushchikh primesej na kharakteristiki radiatsionnykh defektov v antimonide indiya pri ehlektronnom obluchenii}
author = {Vikhlij, G A, Karpenko, A Ya, Litovchenko, P G, Megela, I G, and Tarabrova, L I}
abstractNote = {The data on influence of electron irradiation conditions (beam intensity - 1-10 mkA, irradiation temperature - 80-400 K, electron energy - 4-14 MeV, fluence) type and concentration of impurities on defects introduction rate in InSb, which are stable at room temperature, and the data on galvanomagnetic properties of InSb with such defects are presented. The results are explained by introduction, interaction and annealing of point defects. Mechanisms of irradiation conditions influence on defect production are analyzed. 84 refs.; 16 figs.; 4 tables. (author).}
place = {Ukraine}
year = {1991}
month = {Dec}
}