Abstract
The behaviour of hydrogenated amorphous silicon layers irradiated with a gamma ray source has been studied. The total dose was in the range 5 + 100k Gy. The dark current was used to investigate the time evolution. The recovery effect of radiation damage at room temperature and by thermal annealing has been studied. The results suggest the gamma irradiation introduces dominantly Si dangling bonds: in fact activation energies calculated by time constants of recovery curve are situated like those ones of dangling bonds in the Band Gap.
Baccaro, S;
D`Atanasio, P;
Maiello, G;
Petti, M;
Schirone, L;
[1]
Ferrari, A
[2]
- ENEA, Casaccia (Italy). Area Energia e Innovazione
- Rome Univ. (Italy). Dipt. di Ingegneria Elettronica
Citation Formats
Baccaro, S, D`Atanasio, P, Maiello, G, Petti, M, Schirone, L, and Ferrari, A.
Effects of gamma radiations in hydrogenated amorphous silicon layers; Effetti delle radiazioni {gamma} in film sottili di silicio amorfo idrogenato.
Italy: N. p.,
1994.
Web.
Baccaro, S, D`Atanasio, P, Maiello, G, Petti, M, Schirone, L, & Ferrari, A.
Effects of gamma radiations in hydrogenated amorphous silicon layers; Effetti delle radiazioni {gamma} in film sottili di silicio amorfo idrogenato.
Italy.
Baccaro, S, D`Atanasio, P, Maiello, G, Petti, M, Schirone, L, and Ferrari, A.
1994.
"Effects of gamma radiations in hydrogenated amorphous silicon layers; Effetti delle radiazioni {gamma} in film sottili di silicio amorfo idrogenato."
Italy.
@misc{etde_10123962,
title = {Effects of gamma radiations in hydrogenated amorphous silicon layers; Effetti delle radiazioni {gamma} in film sottili di silicio amorfo idrogenato}
author = {Baccaro, S, D`Atanasio, P, Maiello, G, Petti, M, Schirone, L, and Ferrari, A}
abstractNote = {The behaviour of hydrogenated amorphous silicon layers irradiated with a gamma ray source has been studied. The total dose was in the range 5 + 100k Gy. The dark current was used to investigate the time evolution. The recovery effect of radiation damage at room temperature and by thermal annealing has been studied. The results suggest the gamma irradiation introduces dominantly Si dangling bonds: in fact activation energies calculated by time constants of recovery curve are situated like those ones of dangling bonds in the Band Gap.}
place = {Italy}
year = {1994}
month = {May}
}
title = {Effects of gamma radiations in hydrogenated amorphous silicon layers; Effetti delle radiazioni {gamma} in film sottili di silicio amorfo idrogenato}
author = {Baccaro, S, D`Atanasio, P, Maiello, G, Petti, M, Schirone, L, and Ferrari, A}
abstractNote = {The behaviour of hydrogenated amorphous silicon layers irradiated with a gamma ray source has been studied. The total dose was in the range 5 + 100k Gy. The dark current was used to investigate the time evolution. The recovery effect of radiation damage at room temperature and by thermal annealing has been studied. The results suggest the gamma irradiation introduces dominantly Si dangling bonds: in fact activation energies calculated by time constants of recovery curve are situated like those ones of dangling bonds in the Band Gap.}
place = {Italy}
year = {1994}
month = {May}
}