Abstract
The phonon drag and the electron diffusion contribution to the tensor M, which determines the heat flux U = M {center_dot} E, is calculated for a silicon MOSFETS in a perpendicular magnetic field B. The drag component is obtained using the Boltzmann transport and the diffusion is included using the lowest-order cumulant approximation to describe the scattering between Landau states with different orbit centres. We used the known theoretical formalism, but improvements are made in several respects. First of all, the dielectric function of the Fermi-Thomas approximation, which has been proved to result in overscreening of the interaction, is replaced by the rigorous Lindhart-type dielectric function to take into account the screening between electrons and phonons. Secondly, the contributions of localized electrons are separated from those of the free state electrons which are the only part that contributes to both the conductivity tensor and the magnetothermopower tensor. The calculated M{sub yx} and S{sub xx} reveal magneto-oscillations originating from oscillations in the density of states at the Fermi level. The screening results in reducing the drag contribution to thermopower and the localization of electrons at the band tail reduces both the drag and the diffusion contribution. At T 5.02 K, our
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Qin, G;
[1]
Fromhold, T M;
Butcher, P N
[2]
- International Centre for Theoretical Physics, Trieste (Italy)
- Warwick Univ., Coventry (United Kingdom). Dept. of Physics
Citation Formats
Qin, G, Fromhold, T M, and Butcher, P N.
Thermoelectric coefficients of silicon mosfets in quantizing magnetic field.
IAEA: N. p.,
1992.
Web.
Qin, G, Fromhold, T M, & Butcher, P N.
Thermoelectric coefficients of silicon mosfets in quantizing magnetic field.
IAEA.
Qin, G, Fromhold, T M, and Butcher, P N.
1992.
"Thermoelectric coefficients of silicon mosfets in quantizing magnetic field."
IAEA.
@misc{etde_10120003,
title = {Thermoelectric coefficients of silicon mosfets in quantizing magnetic field}
author = {Qin, G, Fromhold, T M, and Butcher, P N}
abstractNote = {The phonon drag and the electron diffusion contribution to the tensor M, which determines the heat flux U = M {center_dot} E, is calculated for a silicon MOSFETS in a perpendicular magnetic field B. The drag component is obtained using the Boltzmann transport and the diffusion is included using the lowest-order cumulant approximation to describe the scattering between Landau states with different orbit centres. We used the known theoretical formalism, but improvements are made in several respects. First of all, the dielectric function of the Fermi-Thomas approximation, which has been proved to result in overscreening of the interaction, is replaced by the rigorous Lindhart-type dielectric function to take into account the screening between electrons and phonons. Secondly, the contributions of localized electrons are separated from those of the free state electrons which are the only part that contributes to both the conductivity tensor and the magnetothermopower tensor. The calculated M{sub yx} and S{sub xx} reveal magneto-oscillations originating from oscillations in the density of states at the Fermi level. The screening results in reducing the drag contribution to thermopower and the localization of electrons at the band tail reduces both the drag and the diffusion contribution. At T 5.02 K, our new results show that the phonon drag thermopower is suppressed by approximately three orders of magnitude and the diffusion components of the thermopower are negligibly small compared with those due to phonon drag. All the theoretical values of M{sub yx}, S{sub xx} and S{sub yx} are in agreement with the experimental data better than the previous theoretical results. (author). 12 refs, 4 figs.}
place = {IAEA}
year = {1992}
month = {Aug}
}
title = {Thermoelectric coefficients of silicon mosfets in quantizing magnetic field}
author = {Qin, G, Fromhold, T M, and Butcher, P N}
abstractNote = {The phonon drag and the electron diffusion contribution to the tensor M, which determines the heat flux U = M {center_dot} E, is calculated for a silicon MOSFETS in a perpendicular magnetic field B. The drag component is obtained using the Boltzmann transport and the diffusion is included using the lowest-order cumulant approximation to describe the scattering between Landau states with different orbit centres. We used the known theoretical formalism, but improvements are made in several respects. First of all, the dielectric function of the Fermi-Thomas approximation, which has been proved to result in overscreening of the interaction, is replaced by the rigorous Lindhart-type dielectric function to take into account the screening between electrons and phonons. Secondly, the contributions of localized electrons are separated from those of the free state electrons which are the only part that contributes to both the conductivity tensor and the magnetothermopower tensor. The calculated M{sub yx} and S{sub xx} reveal magneto-oscillations originating from oscillations in the density of states at the Fermi level. The screening results in reducing the drag contribution to thermopower and the localization of electrons at the band tail reduces both the drag and the diffusion contribution. At T 5.02 K, our new results show that the phonon drag thermopower is suppressed by approximately three orders of magnitude and the diffusion components of the thermopower are negligibly small compared with those due to phonon drag. All the theoretical values of M{sub yx}, S{sub xx} and S{sub yx} are in agreement with the experimental data better than the previous theoretical results. (author). 12 refs, 4 figs.}
place = {IAEA}
year = {1992}
month = {Aug}
}