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Biexciton formation by two-photon absorption in quantum wells

Technical Report:

Abstract

Direct creation of biexciton states by two-photon absorption in quantum well structure semiconductors is investigated theoretically. The two-photon transition rate to biexciton as a final state is analytically calculated for both photon polarization configurations. The biexciton matrix element has been estimated adopting a more accurate variational parameters wave functions. A numerical application for GaAs Quantum Well (QW) shows that the biexciton two-photon absorption coefficient, {alpha}{sup (2)} (bie{chi}) for both polarization is enhanced over the exciton two-photon absorption coefficient, {alpha}{sup (2)} (E{chi}), by an order of magnitude. This enhancement is, essentially, found to arise from the resonance effect and the structure of the matrix elements involved in the two processes. Furthermore, {alpha}{sup (2)} (bie{chi}), in GaAs QW is four order of magnitude larger than {alpha}{sup (2)} (bie{chi}) in bulk GaAs. This large increase is due to the spatial confinement of the carriers in the QW. (author). 9 refs, 1 tab.
Authors:
Publication Date:
Sep 01, 1992
Product Type:
Technical Report
Report Number:
IC-92/222
Reference Number:
SCA: 664200; 665000; PA: AIX-24:009149; SN: 93000933553
Resource Relation:
Other Information: PBD: Sep 1992
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; GALLIUM ARSENIDES; ENERGY-LEVEL TRANSITIONS; EXCITONS; MATRIX ELEMENTS; SEMICONDUCTOR MATERIALS; WAVE FUNCTIONS; 664200; 665000; SPECTRA OF ATOMS AND MOLECULES AND THEIR INTERACTIONS WITH PHOTONS; PHYSICS OF CONDENSED MATTER
OSTI ID:
10119803
Research Organizations:
International Centre for Theoretical Physics (ICTP), Trieste (Italy)
Country of Origin:
IAEA
Language:
English
Other Identifying Numbers:
Other: ON: DE93613551; TRN: XA9233069009149
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
INIS
Size:
[7] p.
Announcement Date:
Jun 30, 2005

Technical Report:

Citation Formats

Hassan, A R. Biexciton formation by two-photon absorption in quantum wells. IAEA: N. p., 1992. Web.
Hassan, A R. Biexciton formation by two-photon absorption in quantum wells. IAEA.
Hassan, A R. 1992. "Biexciton formation by two-photon absorption in quantum wells." IAEA.
@misc{etde_10119803,
title = {Biexciton formation by two-photon absorption in quantum wells}
author = {Hassan, A R}
abstractNote = {Direct creation of biexciton states by two-photon absorption in quantum well structure semiconductors is investigated theoretically. The two-photon transition rate to biexciton as a final state is analytically calculated for both photon polarization configurations. The biexciton matrix element has been estimated adopting a more accurate variational parameters wave functions. A numerical application for GaAs Quantum Well (QW) shows that the biexciton two-photon absorption coefficient, {alpha}{sup (2)} (bie{chi}) for both polarization is enhanced over the exciton two-photon absorption coefficient, {alpha}{sup (2)} (E{chi}), by an order of magnitude. This enhancement is, essentially, found to arise from the resonance effect and the structure of the matrix elements involved in the two processes. Furthermore, {alpha}{sup (2)} (bie{chi}), in GaAs QW is four order of magnitude larger than {alpha}{sup (2)} (bie{chi}) in bulk GaAs. This large increase is due to the spatial confinement of the carriers in the QW. (author). 9 refs, 1 tab.}
place = {IAEA}
year = {1992}
month = {Sep}
}