Abstract
Direct creation of biexciton states by two-photon absorption in quantum well structure semiconductors is investigated theoretically. The two-photon transition rate to biexciton as a final state is analytically calculated for both photon polarization configurations. The biexciton matrix element has been estimated adopting a more accurate variational parameters wave functions. A numerical application for GaAs Quantum Well (QW) shows that the biexciton two-photon absorption coefficient, {alpha}{sup (2)} (bie{chi}) for both polarization is enhanced over the exciton two-photon absorption coefficient, {alpha}{sup (2)} (E{chi}), by an order of magnitude. This enhancement is, essentially, found to arise from the resonance effect and the structure of the matrix elements involved in the two processes. Furthermore, {alpha}{sup (2)} (bie{chi}), in GaAs QW is four order of magnitude larger than {alpha}{sup (2)} (bie{chi}) in bulk GaAs. This large increase is due to the spatial confinement of the carriers in the QW. (author). 9 refs, 1 tab.
Citation Formats
Hassan, A R.
Biexciton formation by two-photon absorption in quantum wells.
IAEA: N. p.,
1992.
Web.
Hassan, A R.
Biexciton formation by two-photon absorption in quantum wells.
IAEA.
Hassan, A R.
1992.
"Biexciton formation by two-photon absorption in quantum wells."
IAEA.
@misc{etde_10119803,
title = {Biexciton formation by two-photon absorption in quantum wells}
author = {Hassan, A R}
abstractNote = {Direct creation of biexciton states by two-photon absorption in quantum well structure semiconductors is investigated theoretically. The two-photon transition rate to biexciton as a final state is analytically calculated for both photon polarization configurations. The biexciton matrix element has been estimated adopting a more accurate variational parameters wave functions. A numerical application for GaAs Quantum Well (QW) shows that the biexciton two-photon absorption coefficient, {alpha}{sup (2)} (bie{chi}) for both polarization is enhanced over the exciton two-photon absorption coefficient, {alpha}{sup (2)} (E{chi}), by an order of magnitude. This enhancement is, essentially, found to arise from the resonance effect and the structure of the matrix elements involved in the two processes. Furthermore, {alpha}{sup (2)} (bie{chi}), in GaAs QW is four order of magnitude larger than {alpha}{sup (2)} (bie{chi}) in bulk GaAs. This large increase is due to the spatial confinement of the carriers in the QW. (author). 9 refs, 1 tab.}
place = {IAEA}
year = {1992}
month = {Sep}
}
title = {Biexciton formation by two-photon absorption in quantum wells}
author = {Hassan, A R}
abstractNote = {Direct creation of biexciton states by two-photon absorption in quantum well structure semiconductors is investigated theoretically. The two-photon transition rate to biexciton as a final state is analytically calculated for both photon polarization configurations. The biexciton matrix element has been estimated adopting a more accurate variational parameters wave functions. A numerical application for GaAs Quantum Well (QW) shows that the biexciton two-photon absorption coefficient, {alpha}{sup (2)} (bie{chi}) for both polarization is enhanced over the exciton two-photon absorption coefficient, {alpha}{sup (2)} (E{chi}), by an order of magnitude. This enhancement is, essentially, found to arise from the resonance effect and the structure of the matrix elements involved in the two processes. Furthermore, {alpha}{sup (2)} (bie{chi}), in GaAs QW is four order of magnitude larger than {alpha}{sup (2)} (bie{chi}) in bulk GaAs. This large increase is due to the spatial confinement of the carriers in the QW. (author). 9 refs, 1 tab.}
place = {IAEA}
year = {1992}
month = {Sep}
}