## Abstract

Direct creation of biexciton states by two-photon absorption in quantum well structure semiconductors is investigated theoretically. The two-photon transition rate to biexciton as a final state is analytically calculated for both photon polarization configurations. The biexciton matrix element has been estimated adopting a more accurate variational parameters wave functions. A numerical application for GaAs Quantum Well (QW) shows that the biexciton two-photon absorption coefficient, {alpha}{sup (2)} (bie{chi}) for both polarization is enhanced over the exciton two-photon absorption coefficient, {alpha}{sup (2)} (E{chi}), by an order of magnitude. This enhancement is, essentially, found to arise from the resonance effect and the structure of the matrix elements involved in the two processes. Furthermore, {alpha}{sup (2)} (bie{chi}), in GaAs QW is four order of magnitude larger than {alpha}{sup (2)} (bie{chi}) in bulk GaAs. This large increase is due to the spatial confinement of the carriers in the QW. (author). 9 refs, 1 tab.

## Citation Formats

Hassan, A R.
Biexciton formation by two-photon absorption in quantum wells.
IAEA: N. p.,
1992.
Web.

Hassan, A R.
Biexciton formation by two-photon absorption in quantum wells.
IAEA.

Hassan, A R.
1992.
"Biexciton formation by two-photon absorption in quantum wells."
IAEA.

@misc{etde_10119803,

title = {Biexciton formation by two-photon absorption in quantum wells}

author = {Hassan, A R}

abstractNote = {Direct creation of biexciton states by two-photon absorption in quantum well structure semiconductors is investigated theoretically. The two-photon transition rate to biexciton as a final state is analytically calculated for both photon polarization configurations. The biexciton matrix element has been estimated adopting a more accurate variational parameters wave functions. A numerical application for GaAs Quantum Well (QW) shows that the biexciton two-photon absorption coefficient, {alpha}{sup (2)} (bie{chi}) for both polarization is enhanced over the exciton two-photon absorption coefficient, {alpha}{sup (2)} (E{chi}), by an order of magnitude. This enhancement is, essentially, found to arise from the resonance effect and the structure of the matrix elements involved in the two processes. Furthermore, {alpha}{sup (2)} (bie{chi}), in GaAs QW is four order of magnitude larger than {alpha}{sup (2)} (bie{chi}) in bulk GaAs. This large increase is due to the spatial confinement of the carriers in the QW. (author). 9 refs, 1 tab.}

place = {IAEA}

year = {1992}

month = {Sep}

}

title = {Biexciton formation by two-photon absorption in quantum wells}

author = {Hassan, A R}

abstractNote = {Direct creation of biexciton states by two-photon absorption in quantum well structure semiconductors is investigated theoretically. The two-photon transition rate to biexciton as a final state is analytically calculated for both photon polarization configurations. The biexciton matrix element has been estimated adopting a more accurate variational parameters wave functions. A numerical application for GaAs Quantum Well (QW) shows that the biexciton two-photon absorption coefficient, {alpha}{sup (2)} (bie{chi}) for both polarization is enhanced over the exciton two-photon absorption coefficient, {alpha}{sup (2)} (E{chi}), by an order of magnitude. This enhancement is, essentially, found to arise from the resonance effect and the structure of the matrix elements involved in the two processes. Furthermore, {alpha}{sup (2)} (bie{chi}), in GaAs QW is four order of magnitude larger than {alpha}{sup (2)} (bie{chi}) in bulk GaAs. This large increase is due to the spatial confinement of the carriers in the QW. (author). 9 refs, 1 tab.}

place = {IAEA}

year = {1992}

month = {Sep}

}