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On the estimation of matrix elements for optical transitions in semiconductors

Technical Report:

Abstract

A semi-empirical method is used to calculate the numerical values of the interband momentum matrix elements of the allowed optical transitions in semiconductors. This method is based on the evaluation of the ratio of the two-photon and one-photon absorption coefficients and the compare the result with the corresponding experimental values in a number of semiconductors both for direct and indirect transition processes. The numerical values of the momentum matrix elements are compared with the convenient theoretical calculations available. The result is found to agree fairly well with the corresponding values computed using the k-vector {center_dot} p-vector perturbation theory. (author). 19 refs, 2 figs, 2 tabs.
Authors:
Publication Date:
Sep 01, 1992
Product Type:
Technical Report
Report Number:
IC-92/221
Reference Number:
SCA: 664200; 665000; PA: AIX-24:009148; SN: 93000933552
Resource Relation:
Other Information: PBD: Sep 1992
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; SEMICONDUCTOR MATERIALS; ENERGY-LEVEL TRANSITIONS; BAND THEORY; CADMIUM SULFIDES; GALLIUM NITRIDES; GALLIUM PHOSPHIDES; GALLIUM SULFIDES; MATRIX ELEMENTS; PERTURBATION THEORY; ZINC OXIDES; ZINC SELENIDES; 664200; 665000; SPECTRA OF ATOMS AND MOLECULES AND THEIR INTERACTIONS WITH PHOTONS; PHYSICS OF CONDENSED MATTER
OSTI ID:
10119799
Research Organizations:
International Centre for Theoretical Physics (ICTP), Trieste (Italy)
Country of Origin:
IAEA
Language:
English
Other Identifying Numbers:
Other: ON: DE93613550; TRN: XA9233068009148
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
INIS
Size:
[12] p.
Announcement Date:
Jun 30, 2005

Technical Report:

Citation Formats

Hassan, A R. On the estimation of matrix elements for optical transitions in semiconductors. IAEA: N. p., 1992. Web.
Hassan, A R. On the estimation of matrix elements for optical transitions in semiconductors. IAEA.
Hassan, A R. 1992. "On the estimation of matrix elements for optical transitions in semiconductors." IAEA.
@misc{etde_10119799,
title = {On the estimation of matrix elements for optical transitions in semiconductors}
author = {Hassan, A R}
abstractNote = {A semi-empirical method is used to calculate the numerical values of the interband momentum matrix elements of the allowed optical transitions in semiconductors. This method is based on the evaluation of the ratio of the two-photon and one-photon absorption coefficients and the compare the result with the corresponding experimental values in a number of semiconductors both for direct and indirect transition processes. The numerical values of the momentum matrix elements are compared with the convenient theoretical calculations available. The result is found to agree fairly well with the corresponding values computed using the k-vector {center_dot} p-vector perturbation theory. (author). 19 refs, 2 figs, 2 tabs.}
place = {IAEA}
year = {1992}
month = {Sep}
}