Abstract
This paper is focused on the properties of the SIMOX structure that are essential for the proper operation of integrated circuits. These properties are determined by direct inspection of the wafer or inferred from the characterization of test MOS devices. The next section presents the status of the SIMOX technology in terms of quality of the Si film, buried oxide and Si-SiO{sub 2} interfaces. Interface coupling and floating body effects are typical phenomena in SOI transistors and are briefly discussed. Emphasis is put, in the last section, on reliability aspects which may be governed by the resistance of the buried oxide to hot carrier injection and radiation effects.
Ouisse, T;
[1]
Cristoloveanu, S
[2]
- CEA Centre d`Etudes de Grenoble, 38 (France). Direction des Technologies Avancees
- Institut National Polytechnique, 38 - Grenoble (France)
Citation Formats
Ouisse, T, and Cristoloveanu, S.
Properties of SIMOX and related systems.
France: N. p.,
1992.
Web.
Ouisse, T, & Cristoloveanu, S.
Properties of SIMOX and related systems.
France.
Ouisse, T, and Cristoloveanu, S.
1992.
"Properties of SIMOX and related systems."
France.
@misc{etde_10119185,
title = {Properties of SIMOX and related systems}
author = {Ouisse, T, and Cristoloveanu, S}
abstractNote = {This paper is focused on the properties of the SIMOX structure that are essential for the proper operation of integrated circuits. These properties are determined by direct inspection of the wafer or inferred from the characterization of test MOS devices. The next section presents the status of the SIMOX technology in terms of quality of the Si film, buried oxide and Si-SiO{sub 2} interfaces. Interface coupling and floating body effects are typical phenomena in SOI transistors and are briefly discussed. Emphasis is put, in the last section, on reliability aspects which may be governed by the resistance of the buried oxide to hot carrier injection and radiation effects.}
place = {France}
year = {1992}
month = {Dec}
}
title = {Properties of SIMOX and related systems}
author = {Ouisse, T, and Cristoloveanu, S}
abstractNote = {This paper is focused on the properties of the SIMOX structure that are essential for the proper operation of integrated circuits. These properties are determined by direct inspection of the wafer or inferred from the characterization of test MOS devices. The next section presents the status of the SIMOX technology in terms of quality of the Si film, buried oxide and Si-SiO{sub 2} interfaces. Interface coupling and floating body effects are typical phenomena in SOI transistors and are briefly discussed. Emphasis is put, in the last section, on reliability aspects which may be governed by the resistance of the buried oxide to hot carrier injection and radiation effects.}
place = {France}
year = {1992}
month = {Dec}
}