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Properties of SIMOX and related systems

Conference:

Abstract

This paper is focused on the properties of the SIMOX structure that are essential for the proper operation of integrated circuits. These properties are determined by direct inspection of the wafer or inferred from the characterization of test MOS devices. The next section presents the status of the SIMOX technology in terms of quality of the Si film, buried oxide and Si-SiO{sub 2} interfaces. Interface coupling and floating body effects are typical phenomena in SOI transistors and are briefly discussed. Emphasis is put, in the last section, on reliability aspects which may be governed by the resistance of the buried oxide to hot carrier injection and radiation effects.
Authors:
Ouisse, T; [1]  Cristoloveanu, S [2] 
  1. CEA Centre d`Etudes de Grenoble, 38 (France). Direction des Technologies Avancees
  2. Institut National Polytechnique, 38 - Grenoble (France)
Publication Date:
Dec 31, 1992
Product Type:
Conference
Report Number:
CEA-CONF-11073; CONF-9205290-
Reference Number:
SCA: 440200; PA: AIX-24:007743; SN: 93000932538
Resource Relation:
Conference: 2. symposium on the physics and chemistry of SiO{sub 2} and the Si-SiO{sub 2} interface,Saint-Louis, MO (United States),18 May 1992; Other Information: PBD: 1992
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; MOSFET; PHYSICAL RADIATION EFFECTS; AGING; CRYSTAL DEFECTS; INTERFACES; RELIABILITY; 440200; RADIATION EFFECTS ON INSTRUMENT COMPONENTS, INSTRUMENTS, OR ELECTRONIC SYSTEMS
OSTI ID:
10119185
Research Organizations:
CEA Centre d`Etudes de Grenoble, 38 (France). Direction des Technologies Avancees
Country of Origin:
France
Language:
English
Other Identifying Numbers:
Other: ON: DE93612708; TRN: FR9300183007743
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
FRN
Size:
[10] p.
Announcement Date:
Jun 30, 2005

Conference:

Citation Formats

Ouisse, T, and Cristoloveanu, S. Properties of SIMOX and related systems. France: N. p., 1992. Web.
Ouisse, T, & Cristoloveanu, S. Properties of SIMOX and related systems. France.
Ouisse, T, and Cristoloveanu, S. 1992. "Properties of SIMOX and related systems." France.
@misc{etde_10119185,
title = {Properties of SIMOX and related systems}
author = {Ouisse, T, and Cristoloveanu, S}
abstractNote = {This paper is focused on the properties of the SIMOX structure that are essential for the proper operation of integrated circuits. These properties are determined by direct inspection of the wafer or inferred from the characterization of test MOS devices. The next section presents the status of the SIMOX technology in terms of quality of the Si film, buried oxide and Si-SiO{sub 2} interfaces. Interface coupling and floating body effects are typical phenomena in SOI transistors and are briefly discussed. Emphasis is put, in the last section, on reliability aspects which may be governed by the resistance of the buried oxide to hot carrier injection and radiation effects.}
place = {France}
year = {1992}
month = {Dec}
}