Abstract
Structural and electric properties of silicon oxide films irradiated by high energy xenon, nickel or oxygen ions are studied. The local atomic structure modifications are evidenced by infra-red spectroscopy. These modifications are highly dependent of ion mass and of irradiation fluence. Point defects are formed by rupture of Si-O bonds and the SiO{sub 2} network is deformed producing high stresses at Si-O-Si bonds between tetrahedrons, the decrease of the mean value of angles between tetrahedrons is correlated to a decrease of silicon interatomic distances and a densification effect.Damaging cross-sections and track radii are determined for each ion. Damages are annihilated by annealing at 950 deg. C for 1 hour. Electric properties are degraded by irradiation, the interface state density is increased and trapped positive charges are created. These defects are correlated to point defects created by broken Si-O bonds inside the volume and at the interface. Deep level transient spectroscopy shows vacancy-interstitial defects increasing in concentration with irradiation fluence. These defects are similar to those obtained by irradiation with light particles.
Citation Formats
Busch, M C.
Contribution to the study of damage induced by high energy heavy ions in thermal silicon oxide films; Contribution a l`etude des dommages induits par les ions lourds de grande energie dans les films d`oxyde de silicium thermique.
France: N. p.,
1992.
Web.
Busch, M C.
Contribution to the study of damage induced by high energy heavy ions in thermal silicon oxide films; Contribution a l`etude des dommages induits par les ions lourds de grande energie dans les films d`oxyde de silicium thermique.
France.
Busch, M C.
1992.
"Contribution to the study of damage induced by high energy heavy ions in thermal silicon oxide films; Contribution a l`etude des dommages induits par les ions lourds de grande energie dans les films d`oxyde de silicium thermique."
France.
@misc{etde_10118726,
title = {Contribution to the study of damage induced by high energy heavy ions in thermal silicon oxide films; Contribution a l`etude des dommages induits par les ions lourds de grande energie dans les films d`oxyde de silicium thermique}
author = {Busch, M C}
abstractNote = {Structural and electric properties of silicon oxide films irradiated by high energy xenon, nickel or oxygen ions are studied. The local atomic structure modifications are evidenced by infra-red spectroscopy. These modifications are highly dependent of ion mass and of irradiation fluence. Point defects are formed by rupture of Si-O bonds and the SiO{sub 2} network is deformed producing high stresses at Si-O-Si bonds between tetrahedrons, the decrease of the mean value of angles between tetrahedrons is correlated to a decrease of silicon interatomic distances and a densification effect.Damaging cross-sections and track radii are determined for each ion. Damages are annihilated by annealing at 950 deg. C for 1 hour. Electric properties are degraded by irradiation, the interface state density is increased and trapped positive charges are created. These defects are correlated to point defects created by broken Si-O bonds inside the volume and at the interface. Deep level transient spectroscopy shows vacancy-interstitial defects increasing in concentration with irradiation fluence. These defects are similar to those obtained by irradiation with light particles.}
place = {France}
year = {1992}
month = {May}
}
title = {Contribution to the study of damage induced by high energy heavy ions in thermal silicon oxide films; Contribution a l`etude des dommages induits par les ions lourds de grande energie dans les films d`oxyde de silicium thermique}
author = {Busch, M C}
abstractNote = {Structural and electric properties of silicon oxide films irradiated by high energy xenon, nickel or oxygen ions are studied. The local atomic structure modifications are evidenced by infra-red spectroscopy. These modifications are highly dependent of ion mass and of irradiation fluence. Point defects are formed by rupture of Si-O bonds and the SiO{sub 2} network is deformed producing high stresses at Si-O-Si bonds between tetrahedrons, the decrease of the mean value of angles between tetrahedrons is correlated to a decrease of silicon interatomic distances and a densification effect.Damaging cross-sections and track radii are determined for each ion. Damages are annihilated by annealing at 950 deg. C for 1 hour. Electric properties are degraded by irradiation, the interface state density is increased and trapped positive charges are created. These defects are correlated to point defects created by broken Si-O bonds inside the volume and at the interface. Deep level transient spectroscopy shows vacancy-interstitial defects increasing in concentration with irradiation fluence. These defects are similar to those obtained by irradiation with light particles.}
place = {France}
year = {1992}
month = {May}
}