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Motion of channeling particles in a bent crystal

Technical Report:

Abstract

The motion of high-energy charged particles in a bent crystal is investigated in the approximation of the model of continuous potential of crystallographic planes and with account of incoherent scattering on the atoms of media. Angular distribution of charged particle beams is investigated at the exit of the bent region of the crystal in dependence with the maximum deflection angle and energy of particles. The dependence of the fraction of channeling particles on crystal thickness, crystal curvature and particle energy is found in a simple model approximation. The influence of crystal curvature on incoherent scattering of particles in the crystal is analyzed. The concept of an optimal thickness for the maximum number of particles deflected at a given angle is considered. 8 refs.; 8 figs.
Publication Date:
Dec 31, 1990
Product Type:
Technical Report
Report Number:
YERPHI-1245-31-90
Reference Number:
SCA: 665300; PA: AIX-23:018409; SN: 92000662019
Resource Relation:
Other Information: PBD: 1990
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; POSITRON CHANNELING; SILICON; ANGULAR DISTRIBUTION; BENDING; DYNAMICS; ENERGY DEPENDENCE; GEV RANGE 10-100; GEV RANGE 100-1000; INCOHERENT SCATTERING; MONOCRYSTALS; MULTIPLE SCATTERING; STOCHASTIC PROCESSES; THICKNESS; 665300; INTERACTIONS BETWEEN BEAMS AND CONDENSED MATTER
OSTI ID:
10118643
Research Organizations:
Erevanskij Fizicheskij Inst., Erevan (Armenia)
Country of Origin:
USSR
Language:
English
Other Identifying Numbers:
Other: ON: DE92617509; TRN: SU9109316018409
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
INIS
Size:
14 p.
Announcement Date:
Jun 30, 2005

Technical Report:

Citation Formats

Avakian, A R, Harutyunian, A S, Hovanessian, A G, Shahinian, S M, and Yang, C. Motion of channeling particles in a bent crystal. USSR: N. p., 1990. Web.
Avakian, A R, Harutyunian, A S, Hovanessian, A G, Shahinian, S M, & Yang, C. Motion of channeling particles in a bent crystal. USSR.
Avakian, A R, Harutyunian, A S, Hovanessian, A G, Shahinian, S M, and Yang, C. 1990. "Motion of channeling particles in a bent crystal." USSR.
@misc{etde_10118643,
title = {Motion of channeling particles in a bent crystal}
author = {Avakian, A R, Harutyunian, A S, Hovanessian, A G, Shahinian, S M, and Yang, C}
abstractNote = {The motion of high-energy charged particles in a bent crystal is investigated in the approximation of the model of continuous potential of crystallographic planes and with account of incoherent scattering on the atoms of media. Angular distribution of charged particle beams is investigated at the exit of the bent region of the crystal in dependence with the maximum deflection angle and energy of particles. The dependence of the fraction of channeling particles on crystal thickness, crystal curvature and particle energy is found in a simple model approximation. The influence of crystal curvature on incoherent scattering of particles in the crystal is analyzed. The concept of an optimal thickness for the maximum number of particles deflected at a given angle is considered. 8 refs.; 8 figs.}
place = {USSR}
year = {1990}
month = {Dec}
}