You need JavaScript to view this

On fluctuations of electron multiplication in porous dielectrics; O flyuktuatsiyakh chisla ehlektronov pri razmnozhenii v poristom diehlektrike

Technical Report:

Abstract

The conditions of electron multiplication in porous dielectrics in a strong magnetic field (E=10{sup 4}-10{sup 5} V/cm) are considered. The yield of secondary electrons and fluctuations of their number at bombardment with 5.45 MeV {alpha}-particles as a function of the emitter parameters are investigated. An analogy is drawn between the process of controllable secondary emission and gas discharge. It is shown that the fluctuation of the number of electrons is well described by the formula which describes the gas gain factor fluctuations. 16 refs.; 5 figs.
Authors:
Publication Date:
Dec 31, 1990
Product Type:
Technical Report
Report Number:
EFI-1238-24-90
Reference Number:
SCA: 665300; PA: AIX-23:018397; SN: 92000662007
Resource Relation:
Other Information: PBD: 1990
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DIELECTRIC MATERIALS; ELECTRON EMISSION; SECONDARY EMISSION; ALPHA PARTICLES; ALUMINIUM FLUORIDES; DENSITY; DISTRIBUTION FUNCTIONS; ELECTRIC FIELDS; ENERGY DEPENDENCE; MAGNESIUM OXIDES; MEV RANGE 01-10; POROUS MATERIALS; SODIUM FLUORIDES; 665300; INTERACTIONS BETWEEN BEAMS AND CONDENSED MATTER
OSTI ID:
10118631
Research Organizations:
Erevanskij Fizicheskij Inst., Erevan (Armenia)
Country of Origin:
USSR
Language:
Russian
Other Identifying Numbers:
Other: ON: DE92617497; TRN: SU9109366018397
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
INIS
Size:
16 p.
Announcement Date:
Jun 30, 2005

Technical Report:

Citation Formats

Gavalyan, V G. On fluctuations of electron multiplication in porous dielectrics; O flyuktuatsiyakh chisla ehlektronov pri razmnozhenii v poristom diehlektrike. USSR: N. p., 1990. Web.
Gavalyan, V G. On fluctuations of electron multiplication in porous dielectrics; O flyuktuatsiyakh chisla ehlektronov pri razmnozhenii v poristom diehlektrike. USSR.
Gavalyan, V G. 1990. "On fluctuations of electron multiplication in porous dielectrics; O flyuktuatsiyakh chisla ehlektronov pri razmnozhenii v poristom diehlektrike." USSR.
@misc{etde_10118631,
title = {On fluctuations of electron multiplication in porous dielectrics; O flyuktuatsiyakh chisla ehlektronov pri razmnozhenii v poristom diehlektrike}
author = {Gavalyan, V G}
abstractNote = {The conditions of electron multiplication in porous dielectrics in a strong magnetic field (E=10{sup 4}-10{sup 5} V/cm) are considered. The yield of secondary electrons and fluctuations of their number at bombardment with 5.45 MeV {alpha}-particles as a function of the emitter parameters are investigated. An analogy is drawn between the process of controllable secondary emission and gas discharge. It is shown that the fluctuation of the number of electrons is well described by the formula which describes the gas gain factor fluctuations. 16 refs.; 5 figs.}
place = {USSR}
year = {1990}
month = {Dec}
}