Abstract
Self-consistent energy levels of electrons in modulation dopes GaAs - Ga{sub 1}-xAl{sub x}As heterostructures are presented and their dependence on various device parameters are examined. The results of calculation of the subband electron polarization under an external electric field are presented. (author). 17 refs, 5 figs, 1 tab.
El-Kawni, M I;
Ilaiwi, K F;
[1]
Tomak, M
- Middle East Technical Univ., Ankara (Turkey). Dept. of Physics
Citation Formats
El-Kawni, M I, Ilaiwi, K F, and Tomak, M.
Electron polarization in modulation doped heterostructures.
IAEA: N. p.,
1991.
Web.
El-Kawni, M I, Ilaiwi, K F, & Tomak, M.
Electron polarization in modulation doped heterostructures.
IAEA.
El-Kawni, M I, Ilaiwi, K F, and Tomak, M.
1991.
"Electron polarization in modulation doped heterostructures."
IAEA.
@misc{etde_10118611,
title = {Electron polarization in modulation doped heterostructures}
author = {El-Kawni, M I, Ilaiwi, K F, and Tomak, M}
abstractNote = {Self-consistent energy levels of electrons in modulation dopes GaAs - Ga{sub 1}-xAl{sub x}As heterostructures are presented and their dependence on various device parameters are examined. The results of calculation of the subband electron polarization under an external electric field are presented. (author). 17 refs, 5 figs, 1 tab.}
place = {IAEA}
year = {1991}
month = {Oct}
}
title = {Electron polarization in modulation doped heterostructures}
author = {El-Kawni, M I, Ilaiwi, K F, and Tomak, M}
abstractNote = {Self-consistent energy levels of electrons in modulation dopes GaAs - Ga{sub 1}-xAl{sub x}As heterostructures are presented and their dependence on various device parameters are examined. The results of calculation of the subband electron polarization under an external electric field are presented. (author). 17 refs, 5 figs, 1 tab.}
place = {IAEA}
year = {1991}
month = {Oct}
}