## Abstract

For an abrupt heterojunction between two otherwise homogeneous semiconductors in one-dimension we study the effective-mass Hamiltonian H = -1/2 h{sup 2} (m(z){sup {alpha}} (d/ds) m(z){sup {beta}} (d/ds) m(z){sup {alpha}}) + E{sub c}(z) with 2 {alpha} + {beta} = -1, where m(z) is the position-dependent effective-mass and E{sub c}(z) the position-dependent conduction band edge. Through exact model calculations on heterostructures, we find when the effective-mass theory is valid the parameters {alpha} and {beta} and 0 and -1, respectively. This conclusion is obtained in the asymptotic limit of the energy near the band edge and holds for equal lattice parameter. Results are also compared to other theories and possible extension is suggested for strained heterostructures. (author). 19 refs, 2 figs.

## Citation Formats

Brezini, A, and Zekri, N.
Effective mass theory for abrupt heterojunctions.
IAEA: N. p.,
1991.
Web.

Brezini, A, & Zekri, N.
Effective mass theory for abrupt heterojunctions.
IAEA.

Brezini, A, and Zekri, N.
1991.
"Effective mass theory for abrupt heterojunctions."
IAEA.

@misc{etde_10118576,

title = {Effective mass theory for abrupt heterojunctions}

author = {Brezini, A, and Zekri, N}

abstractNote = {For an abrupt heterojunction between two otherwise homogeneous semiconductors in one-dimension we study the effective-mass Hamiltonian H = -1/2 h{sup 2} (m(z){sup {alpha}} (d/ds) m(z){sup {beta}} (d/ds) m(z){sup {alpha}}) + E{sub c}(z) with 2 {alpha} + {beta} = -1, where m(z) is the position-dependent effective-mass and E{sub c}(z) the position-dependent conduction band edge. Through exact model calculations on heterostructures, we find when the effective-mass theory is valid the parameters {alpha} and {beta} and 0 and -1, respectively. This conclusion is obtained in the asymptotic limit of the energy near the band edge and holds for equal lattice parameter. Results are also compared to other theories and possible extension is suggested for strained heterostructures. (author). 19 refs, 2 figs.}

place = {IAEA}

year = {1991}

month = {Sep}

}

title = {Effective mass theory for abrupt heterojunctions}

author = {Brezini, A, and Zekri, N}

abstractNote = {For an abrupt heterojunction between two otherwise homogeneous semiconductors in one-dimension we study the effective-mass Hamiltonian H = -1/2 h{sup 2} (m(z){sup {alpha}} (d/ds) m(z){sup {beta}} (d/ds) m(z){sup {alpha}}) + E{sub c}(z) with 2 {alpha} + {beta} = -1, where m(z) is the position-dependent effective-mass and E{sub c}(z) the position-dependent conduction band edge. Through exact model calculations on heterostructures, we find when the effective-mass theory is valid the parameters {alpha} and {beta} and 0 and -1, respectively. This conclusion is obtained in the asymptotic limit of the energy near the band edge and holds for equal lattice parameter. Results are also compared to other theories and possible extension is suggested for strained heterostructures. (author). 19 refs, 2 figs.}

place = {IAEA}

year = {1991}

month = {Sep}

}