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Effective mass theory for abrupt heterojunctions

Technical Report:

Abstract

For an abrupt heterojunction between two otherwise homogeneous semiconductors in one-dimension we study the effective-mass Hamiltonian H = -1/2 h{sup 2} (m(z){sup {alpha}} (d/ds) m(z){sup {beta}} (d/ds) m(z){sup {alpha}}) + E{sub c}(z) with 2 {alpha} + {beta} = -1, where m(z) is the position-dependent effective-mass and E{sub c}(z) the position-dependent conduction band edge. Through exact model calculations on heterostructures, we find when the effective-mass theory is valid the parameters {alpha} and {beta} and 0 and -1, respectively. This conclusion is obtained in the asymptotic limit of the energy near the band edge and holds for equal lattice parameter. Results are also compared to other theories and possible extension is suggested for strained heterostructures. (author). 19 refs, 2 figs.
Publication Date:
Sep 01, 1991
Product Type:
Technical Report
Report Number:
IC-91/323
Reference Number:
SCA: 665000; PA: AIX-23:018335; SN: 92000661948
Resource Relation:
Other Information: PBD: Sep 1991
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; SEMICONDUCTOR MATERIALS; BAND THEORY; EFFECTIVE MASS; HAMILTONIANS; 665000; PHYSICS OF CONDENSED MATTER
OSTI ID:
10118576
Research Organizations:
International Centre for Theoretical Physics (ICTP), Trieste (Italy)
Country of Origin:
IAEA
Language:
English
Other Identifying Numbers:
Other: ON: DE92617439; TRN: XA9230505018335
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
INIS
Size:
15 p.
Announcement Date:
Jun 30, 2005

Technical Report:

Citation Formats

Brezini, A, and Zekri, N. Effective mass theory for abrupt heterojunctions. IAEA: N. p., 1991. Web.
Brezini, A, & Zekri, N. Effective mass theory for abrupt heterojunctions. IAEA.
Brezini, A, and Zekri, N. 1991. "Effective mass theory for abrupt heterojunctions." IAEA.
@misc{etde_10118576,
title = {Effective mass theory for abrupt heterojunctions}
author = {Brezini, A, and Zekri, N}
abstractNote = {For an abrupt heterojunction between two otherwise homogeneous semiconductors in one-dimension we study the effective-mass Hamiltonian H = -1/2 h{sup 2} (m(z){sup {alpha}} (d/ds) m(z){sup {beta}} (d/ds) m(z){sup {alpha}}) + E{sub c}(z) with 2 {alpha} + {beta} = -1, where m(z) is the position-dependent effective-mass and E{sub c}(z) the position-dependent conduction band edge. Through exact model calculations on heterostructures, we find when the effective-mass theory is valid the parameters {alpha} and {beta} and 0 and -1, respectively. This conclusion is obtained in the asymptotic limit of the energy near the band edge and holds for equal lattice parameter. Results are also compared to other theories and possible extension is suggested for strained heterostructures. (author). 19 refs, 2 figs.}
place = {IAEA}
year = {1991}
month = {Sep}
}