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ETDEWEB   /       /    Hybrid low-noise amplifier on the base of bipolar transistors; Gibridnyj maloshumyashchij usilitel` na bipolyarnykh tranzistorakh

Hybrid low-noise amplifier on the base of bipolar transistors; Gibridnyj maloshumyashchij usilitel` na bipolyarnykh tranzistorakh

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Abstract

The low-noise preamplifier for semiconductor detectors and multiwire proportional chambers is described. Under zero detector capacitance it has the equivalent 3000 electrons noise charge (FWHM) and pulse response total length 15 nS. The four-channel amplifier has dimensions 50x20x3 mm. 3 refs.
Authors:
Golovin, V M; Krasnokutskij, R N; Kurchaninov, L L [1] 
  1. and others
Publication Date:
Dec 31, 1989
Product Type:
Technical Report
Report Number:
IFVE-ONF-89-231
Reference Number:
SCA: 440104; 440103; PA: AIX-23:017414; SN: 92000661266
Resource Relation:
Other Information: PBD: 1989
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; AMPLIFIERS; MULTIWIRE PROPORTIONAL CHAMBERS; SEMICONDUCTOR DETECTORS; BACKGROUND NOISE; DIAGRAMS; SPECIFICATIONS; 440104; 440103; HIGH ENERGY PHYSICS INSTRUMENTATION; NUCLEAR SPECTROSCOPIC INSTRUMENTATION
OSTI ID:
10117632
Research Organizations:
Gosudarstvennyj Komitet po Ispol`zovaniyu Atomnoj Ehnergii SSSR, Serpukhov (Russian Federation). Inst. Fiziki Vysokikh Ehnergij
Country of Origin:
USSR
Language:
Russian
Other Identifying Numbers:
Other: ON: DE92616771; TRN: SU9109390017414
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
INIS
Size:
4 p.
Announcement Date:
Jun 30, 2005

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Citation Formats

Golovin, V M, Krasnokutskij, R N, and Kurchaninov, L L. Hybrid low-noise amplifier on the base of bipolar transistors; Gibridnyj maloshumyashchij usilitel` na bipolyarnykh tranzistorakh. USSR: N. p., 1989. Web.
Golovin, V M, Krasnokutskij, R N, & Kurchaninov, L L. Hybrid low-noise amplifier on the base of bipolar transistors; Gibridnyj maloshumyashchij usilitel` na bipolyarnykh tranzistorakh. USSR.
Golovin, V M, Krasnokutskij, R N, and Kurchaninov, L L. 1989. "Hybrid low-noise amplifier on the base of bipolar transistors; Gibridnyj maloshumyashchij usilitel` na bipolyarnykh tranzistorakh." USSR.
@misc{etde_10117632,
title = {Hybrid low-noise amplifier on the base of bipolar transistors; Gibridnyj maloshumyashchij usilitel` na bipolyarnykh tranzistorakh}
 author = {Golovin, V M, Krasnokutskij, R N, and Kurchaninov, L L}
 abstractNote = {The low-noise preamplifier for semiconductor detectors and multiwire proportional chambers is described. Under zero detector capacitance it has the equivalent 3000 electrons noise charge (FWHM) and pulse response total length 15 nS. The four-channel amplifier has dimensions 50x20x3 mm. 3 refs.}
 place = {USSR}
 year = {1989}
 month = {Dec}
 }