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ETDEWEB   /       /    New starting materials for the MOVPE of AlGaAs/GaAs; Neuartige Ausgangsmaterialien fuer die MOVPE von AlGaAs/GaAs

New starting materials for the MOVPE of AlGaAs/GaAs; Neuartige Ausgangsmaterialien fuer die MOVPE von AlGaAs/GaAs

Thesis/Dissertation:

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Abstract

Investigations of the growth kinetics of GaAs were studied. Various As compounds were systematically checked for the usage of low-pressure MOVPE of AlGaAs interfaces. The different sources were judged by their reactivity and growth rate. (WL).
Authors:
Publication Date:
Jun 28, 1990
Product Type:
Thesis/Dissertation
Report Number:
ETDE-mf-2766046
Reference Number:
SCA: 360601; PA: DE-92:000809; SN: 92000656928
Resource Relation:
Other Information: TH: Diss. (Dr.rer.nat.)Thesis; PBD: 28 Jun 1990
Subject:
36 MATERIALS SCIENCE; INTERFACES; VAPOR PHASE EPITAXY; ARSENIC COMPOUNDS; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; CRYSTAL GROWTH; 360601; PREPARATION AND MANUFACTURE
OSTI ID:
10116709
Research Organizations:
Technische Hochschule Aachen (Germany). Fakultaet fuer Elektrotechnik
Country of Origin:
Germany
Language:
German
Other Identifying Numbers:
Other: ON: DE92766046; TRN: DE9200809
Availability:
OSTI; NTIS (US Sales Only)
Submitting Site:
DE
Size:
83 p.
Announcement Date:
Jun 30, 2005

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Citation Formats

Brauers, A. New starting materials for the MOVPE of AlGaAs/GaAs; Neuartige Ausgangsmaterialien fuer die MOVPE von AlGaAs/GaAs. Germany: N. p., 1990. Web.
Brauers, A. New starting materials for the MOVPE of AlGaAs/GaAs; Neuartige Ausgangsmaterialien fuer die MOVPE von AlGaAs/GaAs. Germany.
Brauers, A. 1990. "New starting materials for the MOVPE of AlGaAs/GaAs; Neuartige Ausgangsmaterialien fuer die MOVPE von AlGaAs/GaAs." Germany.
@misc{etde_10116709,
title = {New starting materials for the MOVPE of AlGaAs/GaAs; Neuartige Ausgangsmaterialien fuer die MOVPE von AlGaAs/GaAs}
 author = {Brauers, A}
 abstractNote = {Investigations of the growth kinetics of GaAs were studied. Various As compounds were systematically checked for the usage of low-pressure MOVPE of AlGaAs interfaces. The different sources were judged by their reactivity and growth rate. (WL).}
 place = {Germany}
 year = {1990}
 month = {Jun}
 }