Abstract
Hydrogen and deuterium plasma treatments were performed on the front side of p-type multi-crystalline silicon wafers with and without emitter, and of solar cells. These treatments were performed at temperatures around 150{sup o}C and 250{sup o}C for 15 to 90 minutes. Chemical depth profiling of deuterium and electrical profiling of hydrogen and deuterium were carried out using SIMS. To correlate the concentration of hydrogen and deuterium to the effect of passivation, this concentration, the minority carrier diffusion length and changes in the cell parameters are compared. 2 figs., 1 tabs., 6 refs.
Weeber, A W;
De Moor, H H.C.;
Steeman, R A;
Sinke, W C;
[1]
Schuurmans, F M;
Michiels, P P;
Verhoef, L A;
[2]
Alkemade, P F.A.;
Algra, E
[3]
- Netherlands Energy Research Foundation ECN, Petten (Netherlands)
- R&S Renewable Energy Systems BV, Helmond (Netherlands)
- Delft Institute for Microelectronics and Submicron Technology DIMES, Delft (Netherlands)
Citation Formats
Weeber, A W, De Moor, H H.C., Steeman, R A, Sinke, W C, Schuurmans, F M, Michiels, P P, Verhoef, L A, Alkemade, P F.A., and Algra, E.
Hydrogen and deuterium in multi-crystalline silicon wafers and solar cells.
Netherlands: N. p.,
1993.
Web.
Weeber, A W, De Moor, H H.C., Steeman, R A, Sinke, W C, Schuurmans, F M, Michiels, P P, Verhoef, L A, Alkemade, P F.A., & Algra, E.
Hydrogen and deuterium in multi-crystalline silicon wafers and solar cells.
Netherlands.
Weeber, A W, De Moor, H H.C., Steeman, R A, Sinke, W C, Schuurmans, F M, Michiels, P P, Verhoef, L A, Alkemade, P F.A., and Algra, E.
1993.
"Hydrogen and deuterium in multi-crystalline silicon wafers and solar cells."
Netherlands.
@misc{etde_10115950,
title = {Hydrogen and deuterium in multi-crystalline silicon wafers and solar cells}
author = {Weeber, A W, De Moor, H H.C., Steeman, R A, Sinke, W C, Schuurmans, F M, Michiels, P P, Verhoef, L A, Alkemade, P F.A., and Algra, E}
abstractNote = {Hydrogen and deuterium plasma treatments were performed on the front side of p-type multi-crystalline silicon wafers with and without emitter, and of solar cells. These treatments were performed at temperatures around 150{sup o}C and 250{sup o}C for 15 to 90 minutes. Chemical depth profiling of deuterium and electrical profiling of hydrogen and deuterium were carried out using SIMS. To correlate the concentration of hydrogen and deuterium to the effect of passivation, this concentration, the minority carrier diffusion length and changes in the cell parameters are compared. 2 figs., 1 tabs., 6 refs.}
place = {Netherlands}
year = {1993}
month = {Sep}
}
title = {Hydrogen and deuterium in multi-crystalline silicon wafers and solar cells}
author = {Weeber, A W, De Moor, H H.C., Steeman, R A, Sinke, W C, Schuurmans, F M, Michiels, P P, Verhoef, L A, Alkemade, P F.A., and Algra, E}
abstractNote = {Hydrogen and deuterium plasma treatments were performed on the front side of p-type multi-crystalline silicon wafers with and without emitter, and of solar cells. These treatments were performed at temperatures around 150{sup o}C and 250{sup o}C for 15 to 90 minutes. Chemical depth profiling of deuterium and electrical profiling of hydrogen and deuterium were carried out using SIMS. To correlate the concentration of hydrogen and deuterium to the effect of passivation, this concentration, the minority carrier diffusion length and changes in the cell parameters are compared. 2 figs., 1 tabs., 6 refs.}
place = {Netherlands}
year = {1993}
month = {Sep}
}