Abstract
Hydrogen and deuterium plasma treatments were performed on the front side of p-type semi-crystalline silicon wafers with and without emitter, and of solar cells. These treatments were performed at temperatures around 150{sup o}C and 250{sup o}C for 15 to 90 minutes. Chemical depth profiling of deuterium and electrical profiling of hydrogen and deuterium were carried out using SIMS and the C-V profiling technique. To correlate the concentration of hydrogen and deuterium to the effect of passivation, this concentration, the minority carrier diffusion length and changes in the cell parameters are compared. 2 figs., 3 tabs., 8 refs.
Weeber, A W;
De Moor, H H.C.;
Steeman, R A;
Sinke, W C;
[1]
Schuurmans, F M;
Michiels, P P;
Verhoef, L A
[2]
- Netherlands Energy Research Foundation ECN, Petten (Netherlands)
- R&S Renewable Energy Systems BV, Helmond (Netherlands)
Citation Formats
Weeber, A W, De Moor, H H.C., Steeman, R A, Sinke, W C, Schuurmans, F M, Michiels, P P, and Verhoef, L A.
Hydrogen and deuterium in semi-crystalline silicon wafers and solar cells.
Netherlands: N. p.,
1993.
Web.
Weeber, A W, De Moor, H H.C., Steeman, R A, Sinke, W C, Schuurmans, F M, Michiels, P P, & Verhoef, L A.
Hydrogen and deuterium in semi-crystalline silicon wafers and solar cells.
Netherlands.
Weeber, A W, De Moor, H H.C., Steeman, R A, Sinke, W C, Schuurmans, F M, Michiels, P P, and Verhoef, L A.
1993.
"Hydrogen and deuterium in semi-crystalline silicon wafers and solar cells."
Netherlands.
@misc{etde_10115947,
title = {Hydrogen and deuterium in semi-crystalline silicon wafers and solar cells}
author = {Weeber, A W, De Moor, H H.C., Steeman, R A, Sinke, W C, Schuurmans, F M, Michiels, P P, and Verhoef, L A}
abstractNote = {Hydrogen and deuterium plasma treatments were performed on the front side of p-type semi-crystalline silicon wafers with and without emitter, and of solar cells. These treatments were performed at temperatures around 150{sup o}C and 250{sup o}C for 15 to 90 minutes. Chemical depth profiling of deuterium and electrical profiling of hydrogen and deuterium were carried out using SIMS and the C-V profiling technique. To correlate the concentration of hydrogen and deuterium to the effect of passivation, this concentration, the minority carrier diffusion length and changes in the cell parameters are compared. 2 figs., 3 tabs., 8 refs.}
place = {Netherlands}
year = {1993}
month = {Sep}
}
title = {Hydrogen and deuterium in semi-crystalline silicon wafers and solar cells}
author = {Weeber, A W, De Moor, H H.C., Steeman, R A, Sinke, W C, Schuurmans, F M, Michiels, P P, and Verhoef, L A}
abstractNote = {Hydrogen and deuterium plasma treatments were performed on the front side of p-type semi-crystalline silicon wafers with and without emitter, and of solar cells. These treatments were performed at temperatures around 150{sup o}C and 250{sup o}C for 15 to 90 minutes. Chemical depth profiling of deuterium and electrical profiling of hydrogen and deuterium were carried out using SIMS and the C-V profiling technique. To correlate the concentration of hydrogen and deuterium to the effect of passivation, this concentration, the minority carrier diffusion length and changes in the cell parameters are compared. 2 figs., 3 tabs., 8 refs.}
place = {Netherlands}
year = {1993}
month = {Sep}
}