Abstract
The subband energy states in low-dimensional structures, quantum wells and heterostructures are computed by a new method, which accounts directly the quantum interference effect. It is base on the sum of Feynman paths in real space and time. The heard of this method is a special procedure, which sums a huge number of Feynman paths - of order of 10{sup 663}, as shown in one of the presented examples. The method has wider applicability range compared to the conventional techniques based on the Schroedinger equation, and can be applied for modelling of the following two cases: (i) resonant tunneling structures or space charge layers in which one discrete energy level interacts with quasicontinuum of states, (ii) compounds with negative energy gaps. Several illustrative examples are given and possible modifications and applications to other problems are outlined. (author). 26 refs, 6 figs.
Citation Formats
Nachev, I.
The quantum interference effect in semiconductor space charge layers studied by Feynman path integrals. General formalism and illustrative examples.
IAEA: N. p.,
1994.
Web.
Nachev, I.
The quantum interference effect in semiconductor space charge layers studied by Feynman path integrals. General formalism and illustrative examples.
IAEA.
Nachev, I.
1994.
"The quantum interference effect in semiconductor space charge layers studied by Feynman path integrals. General formalism and illustrative examples."
IAEA.
@misc{etde_10113022,
title = {The quantum interference effect in semiconductor space charge layers studied by Feynman path integrals. General formalism and illustrative examples}
author = {Nachev, I}
abstractNote = {The subband energy states in low-dimensional structures, quantum wells and heterostructures are computed by a new method, which accounts directly the quantum interference effect. It is base on the sum of Feynman paths in real space and time. The heard of this method is a special procedure, which sums a huge number of Feynman paths - of order of 10{sup 663}, as shown in one of the presented examples. The method has wider applicability range compared to the conventional techniques based on the Schroedinger equation, and can be applied for modelling of the following two cases: (i) resonant tunneling structures or space charge layers in which one discrete energy level interacts with quasicontinuum of states, (ii) compounds with negative energy gaps. Several illustrative examples are given and possible modifications and applications to other problems are outlined. (author). 26 refs, 6 figs.}
place = {IAEA}
year = {1994}
month = {Oct}
}
title = {The quantum interference effect in semiconductor space charge layers studied by Feynman path integrals. General formalism and illustrative examples}
author = {Nachev, I}
abstractNote = {The subband energy states in low-dimensional structures, quantum wells and heterostructures are computed by a new method, which accounts directly the quantum interference effect. It is base on the sum of Feynman paths in real space and time. The heard of this method is a special procedure, which sums a huge number of Feynman paths - of order of 10{sup 663}, as shown in one of the presented examples. The method has wider applicability range compared to the conventional techniques based on the Schroedinger equation, and can be applied for modelling of the following two cases: (i) resonant tunneling structures or space charge layers in which one discrete energy level interacts with quasicontinuum of states, (ii) compounds with negative energy gaps. Several illustrative examples are given and possible modifications and applications to other problems are outlined. (author). 26 refs, 6 figs.}
place = {IAEA}
year = {1994}
month = {Oct}
}