You need JavaScript to view this

The quantum interference effect in semiconductor space charge layers studied by Feynman path integrals. General formalism and illustrative examples

Technical Report:

Abstract

The subband energy states in low-dimensional structures, quantum wells and heterostructures are computed by a new method, which accounts directly the quantum interference effect. It is base on the sum of Feynman paths in real space and time. The heard of this method is a special procedure, which sums a huge number of Feynman paths - of order of 10{sup 663}, as shown in one of the presented examples. The method has wider applicability range compared to the conventional techniques based on the Schroedinger equation, and can be applied for modelling of the following two cases: (i) resonant tunneling structures or space charge layers in which one discrete energy level interacts with quasicontinuum of states, (ii) compounds with negative energy gaps. Several illustrative examples are given and possible modifications and applications to other problems are outlined. (author). 26 refs, 6 figs.
Authors:
Publication Date:
Oct 01, 1994
Product Type:
Technical Report
Report Number:
IC-94/334
Reference Number:
SCA: 665430; 661100; PA: AIX-26:014107; EDB-95:033087; SN: 95001325809
Resource Relation:
Other Information: PBD: Oct 1994
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BAND THEORY; FEYNMAN PATH INTEGRAL; CADMIUM TELLURIDES; ENERGY GAP; ENERGY LEVELS; INTERFERENCE; MERCURY TELLURIDES; PROPAGATOR; SEMICONDUCTOR JUNCTIONS; SPACE CHARGE; 665430; 661100; OTHER TOPICS IN QUANTUM FLUIDS AND SOLIDS; CLASSICAL AND QUANTUM MECHANICS
OSTI ID:
10113022
Research Organizations:
International Centre for Theoretical Physics (ICTP), Trieste (Italy)
Country of Origin:
IAEA
Language:
English
Other Identifying Numbers:
Other: ON: DE95614483; TRN: XA9438643014107
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
INIS
Size:
20 p.
Announcement Date:
Jun 30, 2005

Technical Report:

Citation Formats

Nachev, I. The quantum interference effect in semiconductor space charge layers studied by Feynman path integrals. General formalism and illustrative examples. IAEA: N. p., 1994. Web.
Nachev, I. The quantum interference effect in semiconductor space charge layers studied by Feynman path integrals. General formalism and illustrative examples. IAEA.
Nachev, I. 1994. "The quantum interference effect in semiconductor space charge layers studied by Feynman path integrals. General formalism and illustrative examples." IAEA.
@misc{etde_10113022,
title = {The quantum interference effect in semiconductor space charge layers studied by Feynman path integrals. General formalism and illustrative examples}
author = {Nachev, I}
abstractNote = {The subband energy states in low-dimensional structures, quantum wells and heterostructures are computed by a new method, which accounts directly the quantum interference effect. It is base on the sum of Feynman paths in real space and time. The heard of this method is a special procedure, which sums a huge number of Feynman paths - of order of 10{sup 663}, as shown in one of the presented examples. The method has wider applicability range compared to the conventional techniques based on the Schroedinger equation, and can be applied for modelling of the following two cases: (i) resonant tunneling structures or space charge layers in which one discrete energy level interacts with quasicontinuum of states, (ii) compounds with negative energy gaps. Several illustrative examples are given and possible modifications and applications to other problems are outlined. (author). 26 refs, 6 figs.}
place = {IAEA}
year = {1994}
month = {Oct}
}