Abstract
The antiferromagnetic instability of heavy-fermion alloys with conduction band impurities is examined in the single-site coherent-potential approximation with the strong correlation treated by the slave-boson technique of Kotliar and Ruckenstein. The variation of paramagnetic-antiferromagnetic phase boundary with the impurity concentration has been studied in the case of isoelectronic doping. Our results show that the isoelectronic doping favours the formation of antiferromagnetism if the impurities increase the cell volume, thus suppress the c-f mixing, which is in agreement with the experimental observations in Ce(Cu{sub 1-x}Ag{sub x})6 and Ce(Cu{sub 1-x}Au{sub x})6. The obtained phase diagram can also be used to explain the effects of non-isoelectronic substitutions of Al for Cu in CeCu{sub 6}. (author). 19 refs, 2 figs.
Chengchung, Lee;
[1]
Xiaohua, Xu
[2]
- International Centre for Theoretical Physics, Trieste (Italy)
- Nanjing Univ., Nanjing (China). Dept. of Physics
Citation Formats
Chengchung, Lee, and Xiaohua, Xu.
Antiferromagnetic instability of heavy-fermion alloys with conduction band impurities.
IAEA: N. p.,
1994.
Web.
Chengchung, Lee, & Xiaohua, Xu.
Antiferromagnetic instability of heavy-fermion alloys with conduction band impurities.
IAEA.
Chengchung, Lee, and Xiaohua, Xu.
1994.
"Antiferromagnetic instability of heavy-fermion alloys with conduction band impurities."
IAEA.
@misc{etde_10112925,
title = {Antiferromagnetic instability of heavy-fermion alloys with conduction band impurities}
author = {Chengchung, Lee, and Xiaohua, Xu}
abstractNote = {The antiferromagnetic instability of heavy-fermion alloys with conduction band impurities is examined in the single-site coherent-potential approximation with the strong correlation treated by the slave-boson technique of Kotliar and Ruckenstein. The variation of paramagnetic-antiferromagnetic phase boundary with the impurity concentration has been studied in the case of isoelectronic doping. Our results show that the isoelectronic doping favours the formation of antiferromagnetism if the impurities increase the cell volume, thus suppress the c-f mixing, which is in agreement with the experimental observations in Ce(Cu{sub 1-x}Ag{sub x})6 and Ce(Cu{sub 1-x}Au{sub x})6. The obtained phase diagram can also be used to explain the effects of non-isoelectronic substitutions of Al for Cu in CeCu{sub 6}. (author). 19 refs, 2 figs.}
place = {IAEA}
year = {1994}
month = {Aug}
}
title = {Antiferromagnetic instability of heavy-fermion alloys with conduction band impurities}
author = {Chengchung, Lee, and Xiaohua, Xu}
abstractNote = {The antiferromagnetic instability of heavy-fermion alloys with conduction band impurities is examined in the single-site coherent-potential approximation with the strong correlation treated by the slave-boson technique of Kotliar and Ruckenstein. The variation of paramagnetic-antiferromagnetic phase boundary with the impurity concentration has been studied in the case of isoelectronic doping. Our results show that the isoelectronic doping favours the formation of antiferromagnetism if the impurities increase the cell volume, thus suppress the c-f mixing, which is in agreement with the experimental observations in Ce(Cu{sub 1-x}Ag{sub x})6 and Ce(Cu{sub 1-x}Au{sub x})6. The obtained phase diagram can also be used to explain the effects of non-isoelectronic substitutions of Al for Cu in CeCu{sub 6}. (author). 19 refs, 2 figs.}
place = {IAEA}
year = {1994}
month = {Aug}
}