Abstract
The third harmonic generation of far-infrared (FIR) laser radiation in n-doped silicon was measured for the first time with full temporal resolution of the power fluctuations during the FIR laser pulse. Thus the intensity dependence of the nonlinear coefficient {chi}{sup (3)} could be observed. For 2 MW incident power, corresponding to an intensity of 15 MW/cm{sup 2}, at a wavelength of 676 {mu}m a power conversion efficiency of 10{sup -3} was reached. (author) 5 figs., 6 refs.
Urban, M;
Nieswand, C;
Siegrist, M R;
[1]
Keilmann, F
[2]
- Ecole Polytechnique Federale, Lausanne (Switzerland). Centre de Recherche en Physique des Plasma (CRPP)
- Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany)
Citation Formats
Urban, M, Nieswand, C, Siegrist, M R, and Keilmann, F.
Intensity dependence of the third harmonic generation efficiency for high power far infrared radiation in n-silicon.
Switzerland: N. p.,
1994.
Web.
Urban, M, Nieswand, C, Siegrist, M R, & Keilmann, F.
Intensity dependence of the third harmonic generation efficiency for high power far infrared radiation in n-silicon.
Switzerland.
Urban, M, Nieswand, C, Siegrist, M R, and Keilmann, F.
1994.
"Intensity dependence of the third harmonic generation efficiency for high power far infrared radiation in n-silicon."
Switzerland.
@misc{etde_10112902,
title = {Intensity dependence of the third harmonic generation efficiency for high power far infrared radiation in n-silicon}
author = {Urban, M, Nieswand, C, Siegrist, M R, and Keilmann, F}
abstractNote = {The third harmonic generation of far-infrared (FIR) laser radiation in n-doped silicon was measured for the first time with full temporal resolution of the power fluctuations during the FIR laser pulse. Thus the intensity dependence of the nonlinear coefficient {chi}{sup (3)} could be observed. For 2 MW incident power, corresponding to an intensity of 15 MW/cm{sup 2}, at a wavelength of 676 {mu}m a power conversion efficiency of 10{sup -3} was reached. (author) 5 figs., 6 refs.}
place = {Switzerland}
year = {1994}
month = {Nov}
}
title = {Intensity dependence of the third harmonic generation efficiency for high power far infrared radiation in n-silicon}
author = {Urban, M, Nieswand, C, Siegrist, M R, and Keilmann, F}
abstractNote = {The third harmonic generation of far-infrared (FIR) laser radiation in n-doped silicon was measured for the first time with full temporal resolution of the power fluctuations during the FIR laser pulse. Thus the intensity dependence of the nonlinear coefficient {chi}{sup (3)} could be observed. For 2 MW incident power, corresponding to an intensity of 15 MW/cm{sup 2}, at a wavelength of 676 {mu}m a power conversion efficiency of 10{sup -3} was reached. (author) 5 figs., 6 refs.}
place = {Switzerland}
year = {1994}
month = {Nov}
}