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Intensity dependence of the third harmonic generation efficiency for high power far infrared radiation in n-silicon

Technical Report:

Abstract

The third harmonic generation of far-infrared (FIR) laser radiation in n-doped silicon was measured for the first time with full temporal resolution of the power fluctuations during the FIR laser pulse. Thus the intensity dependence of the nonlinear coefficient {chi}{sup (3)} could be observed. For 2 MW incident power, corresponding to an intensity of 15 MW/cm{sup 2}, at a wavelength of 676 {mu}m a power conversion efficiency of 10{sup -3} was reached. (author) 5 figs., 6 refs.
Authors:
Urban, M; Nieswand, C; Siegrist, M R; [1]  Keilmann, F [2] 
  1. Ecole Polytechnique Federale, Lausanne (Switzerland). Centre de Recherche en Physique des Plasma (CRPP)
  2. Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany)
Publication Date:
Nov 01, 1994
Product Type:
Technical Report
Report Number:
LRP-509/94
Reference Number:
SCA: 700390; PA: AIX-26:013673; EDB-95:033349; SN: 95001325570
Resource Relation:
Other Information: PBD: Nov 1994
Subject:
70 PLASMA PHYSICS AND FUSION TECHNOLOGY; HARMONIC GENERATION; EFFICIENCY; NONLINEAR OPTICS; LASER RADIATION; FAR INFRARED RADIATION; SILICON; EXPERIMENTAL DATA; FLUCTUATIONS; NONLINEAR PROBLEMS; TIME RESOLUTION; 700390; OTHER PLASMA PHYSICS STUDIES
OSTI ID:
10112902
Research Organizations:
Ecole Polytechnique Federale, Lausanne (Switzerland). Centre de Recherche en Physique des Plasma (CRPP)
Country of Origin:
Switzerland
Language:
English
Other Identifying Numbers:
Other: ON: DE95614248; TRN: CH9400409013673
Availability:
OSTI; NTIS; INIS
Submitting Site:
CHN
Size:
26 p.
Announcement Date:
Jun 30, 2005

Technical Report:

Citation Formats

Urban, M, Nieswand, C, Siegrist, M R, and Keilmann, F. Intensity dependence of the third harmonic generation efficiency for high power far infrared radiation in n-silicon. Switzerland: N. p., 1994. Web.
Urban, M, Nieswand, C, Siegrist, M R, & Keilmann, F. Intensity dependence of the third harmonic generation efficiency for high power far infrared radiation in n-silicon. Switzerland.
Urban, M, Nieswand, C, Siegrist, M R, and Keilmann, F. 1994. "Intensity dependence of the third harmonic generation efficiency for high power far infrared radiation in n-silicon." Switzerland.
@misc{etde_10112902,
title = {Intensity dependence of the third harmonic generation efficiency for high power far infrared radiation in n-silicon}
author = {Urban, M, Nieswand, C, Siegrist, M R, and Keilmann, F}
abstractNote = {The third harmonic generation of far-infrared (FIR) laser radiation in n-doped silicon was measured for the first time with full temporal resolution of the power fluctuations during the FIR laser pulse. Thus the intensity dependence of the nonlinear coefficient {chi}{sup (3)} could be observed. For 2 MW incident power, corresponding to an intensity of 15 MW/cm{sup 2}, at a wavelength of 676 {mu}m a power conversion efficiency of 10{sup -3} was reached. (author) 5 figs., 6 refs.}
place = {Switzerland}
year = {1994}
month = {Nov}
}