Abstract
The effects of nonlinear electron-optical interaction between two quantum wells in the active region of low-dimensional lasers with inhomogeneous excitation are discussed. The conditions for realizing bistable behaviour of optical output and self-sustained pulsations of radiation at two optical wavelengths are determined. The influence of current carrier leakage on the hard regime of lasing is considered. The synchronization effect of coupled well modulation of injection on pulse generation has been predicted. Analysis based on rate equations has been performed for the GaAs - Al{sub x}Ga{sub 1-x}As system. (author). 5 refs, 4 figs.
Kononenko, V.K.;
[1]
Afonenko, A A;
Manak, I S
[2]
- International Centre for Theoretical Physics, Trieste (Italy)
- Belorusskij Gosudarstvennyj Univ., Minsk (Belarus)
Citation Formats
Kononenko, V.K., Afonenko, A A, and Manak, I S.
Electron-optical nonlinear interaction in asymmetric quantum-well laser heterostructures.
IAEA: N. p.,
1994.
Web.
Kononenko, V.K., Afonenko, A A, & Manak, I S.
Electron-optical nonlinear interaction in asymmetric quantum-well laser heterostructures.
IAEA.
Kononenko, V.K., Afonenko, A A, and Manak, I S.
1994.
"Electron-optical nonlinear interaction in asymmetric quantum-well laser heterostructures."
IAEA.
@misc{etde_10112440,
title = {Electron-optical nonlinear interaction in asymmetric quantum-well laser heterostructures}
author = {Kononenko, V.K., Afonenko, A A, and Manak, I S}
abstractNote = {The effects of nonlinear electron-optical interaction between two quantum wells in the active region of low-dimensional lasers with inhomogeneous excitation are discussed. The conditions for realizing bistable behaviour of optical output and self-sustained pulsations of radiation at two optical wavelengths are determined. The influence of current carrier leakage on the hard regime of lasing is considered. The synchronization effect of coupled well modulation of injection on pulse generation has been predicted. Analysis based on rate equations has been performed for the GaAs - Al{sub x}Ga{sub 1-x}As system. (author). 5 refs, 4 figs.}
place = {IAEA}
year = {1994}
month = {Sep}
}
title = {Electron-optical nonlinear interaction in asymmetric quantum-well laser heterostructures}
author = {Kononenko, V.K., Afonenko, A A, and Manak, I S}
abstractNote = {The effects of nonlinear electron-optical interaction between two quantum wells in the active region of low-dimensional lasers with inhomogeneous excitation are discussed. The conditions for realizing bistable behaviour of optical output and self-sustained pulsations of radiation at two optical wavelengths are determined. The influence of current carrier leakage on the hard regime of lasing is considered. The synchronization effect of coupled well modulation of injection on pulse generation has been predicted. Analysis based on rate equations has been performed for the GaAs - Al{sub x}Ga{sub 1-x}As system. (author). 5 refs, 4 figs.}
place = {IAEA}
year = {1994}
month = {Sep}
}