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Investigation of Silicon Planar Detectors for LHC project

Technical Report:

Abstract

Planar detectors developed by ELMA, Zelenograd, Russia, For high energy physics application have been investigated. Detectors with dimensions 20-20-0.4 mm{sup 3} have been manufactured of high resistivity (2-6 k Ohm {center_dot} cm) n-type float-zone silicon (FZ-Si). Parameters of deep levels in the forbidden gap, defect types and concentration, donor and acceptor impurity concentration have been determined for two samples of starting float zone crystals manufactured by two different producers: FZ-Si from WACKER CHEMITRONICS and Zaporozh`e Titanium-Magnesium Factory (ZTMF, Zaporozh`e, UK).The research includes the measurements of current-voltage characteristics, capacitance-voltage characteristics, charge collection efficiency and signal kinetics for the detector experimental set. The results have shown that the detector parameters are acceptable for their application in high energy physics as well as in the field of traditional spectroscopy. (author). 11 refs.; 13 figs.; 2 tabs.
Authors:
Cheremukhin, A; Golutvin, I; Rashevskij, A [1] 
  1. Joint Inst. for Nuclear Research, Dubna (Russian Federation); and others
Publication Date:
Dec 31, 1994
Product Type:
Technical Report
Report Number:
JINR-E-13-94-247
Reference Number:
SCA: 440104; PA: AIX-26:011698; EDB-95:031043; SN: 95001324330
Resource Relation:
Other Information: DN: Submitted to Nuclear Instruments and Methods.; PBD: 1994
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; SI SEMICONDUCTOR DETECTORS; CRYSTAL DEFECTS; RADIATION HARDENING; CHARGE CARRIERS; COLLIDING BEAMS; CRYSTALS; CURRENT DENSITY; ELECTRIC CURRENTS; ENERGY RESOLUTION; NOISE; SILICON; TEMPERATURE DEPENDENCE; WACKERSDORF REPROCESSING PLANT; 440104; HIGH ENERGY PHYSICS INSTRUMENTATION
OSTI ID:
10112171
Research Organizations:
Joint Inst. for Nuclear Research, Dubna (Russian Federation)
Country of Origin:
JINR
Language:
English
Other Identifying Numbers:
Other: ON: DE95613075; TRN: XJ9406548011698
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
INIS
Size:
18 p.
Announcement Date:
Jun 30, 2005

Technical Report:

Citation Formats

Cheremukhin, A, Golutvin, I, and Rashevskij, A. Investigation of Silicon Planar Detectors for LHC project. JINR: N. p., 1994. Web.
Cheremukhin, A, Golutvin, I, & Rashevskij, A. Investigation of Silicon Planar Detectors for LHC project. JINR.
Cheremukhin, A, Golutvin, I, and Rashevskij, A. 1994. "Investigation of Silicon Planar Detectors for LHC project." JINR.
@misc{etde_10112171,
title = {Investigation of Silicon Planar Detectors for LHC project}
author = {Cheremukhin, A, Golutvin, I, and Rashevskij, A}
abstractNote = {Planar detectors developed by ELMA, Zelenograd, Russia, For high energy physics application have been investigated. Detectors with dimensions 20-20-0.4 mm{sup 3} have been manufactured of high resistivity (2-6 k Ohm {center_dot} cm) n-type float-zone silicon (FZ-Si). Parameters of deep levels in the forbidden gap, defect types and concentration, donor and acceptor impurity concentration have been determined for two samples of starting float zone crystals manufactured by two different producers: FZ-Si from WACKER CHEMITRONICS and Zaporozh`e Titanium-Magnesium Factory (ZTMF, Zaporozh`e, UK).The research includes the measurements of current-voltage characteristics, capacitance-voltage characteristics, charge collection efficiency and signal kinetics for the detector experimental set. The results have shown that the detector parameters are acceptable for their application in high energy physics as well as in the field of traditional spectroscopy. (author). 11 refs.; 13 figs.; 2 tabs.}
place = {JINR}
year = {1994}
month = {Dec}
}