Abstract
Planar detectors developed by ELMA, Zelenograd, Russia, For high energy physics application have been investigated. Detectors with dimensions 20-20-0.4 mm{sup 3} have been manufactured of high resistivity (2-6 k Ohm {center_dot} cm) n-type float-zone silicon (FZ-Si). Parameters of deep levels in the forbidden gap, defect types and concentration, donor and acceptor impurity concentration have been determined for two samples of starting float zone crystals manufactured by two different producers: FZ-Si from WACKER CHEMITRONICS and Zaporozh`e Titanium-Magnesium Factory (ZTMF, Zaporozh`e, UK).The research includes the measurements of current-voltage characteristics, capacitance-voltage characteristics, charge collection efficiency and signal kinetics for the detector experimental set. The results have shown that the detector parameters are acceptable for their application in high energy physics as well as in the field of traditional spectroscopy. (author). 11 refs.; 13 figs.; 2 tabs.
Cheremukhin, A;
Golutvin, I;
Rashevskij, A
[1]
- Joint Inst. for Nuclear Research, Dubna (Russian Federation); and others
Citation Formats
Cheremukhin, A, Golutvin, I, and Rashevskij, A.
Investigation of Silicon Planar Detectors for LHC project.
JINR: N. p.,
1994.
Web.
Cheremukhin, A, Golutvin, I, & Rashevskij, A.
Investigation of Silicon Planar Detectors for LHC project.
JINR.
Cheremukhin, A, Golutvin, I, and Rashevskij, A.
1994.
"Investigation of Silicon Planar Detectors for LHC project."
JINR.
@misc{etde_10112171,
title = {Investigation of Silicon Planar Detectors for LHC project}
author = {Cheremukhin, A, Golutvin, I, and Rashevskij, A}
abstractNote = {Planar detectors developed by ELMA, Zelenograd, Russia, For high energy physics application have been investigated. Detectors with dimensions 20-20-0.4 mm{sup 3} have been manufactured of high resistivity (2-6 k Ohm {center_dot} cm) n-type float-zone silicon (FZ-Si). Parameters of deep levels in the forbidden gap, defect types and concentration, donor and acceptor impurity concentration have been determined for two samples of starting float zone crystals manufactured by two different producers: FZ-Si from WACKER CHEMITRONICS and Zaporozh`e Titanium-Magnesium Factory (ZTMF, Zaporozh`e, UK).The research includes the measurements of current-voltage characteristics, capacitance-voltage characteristics, charge collection efficiency and signal kinetics for the detector experimental set. The results have shown that the detector parameters are acceptable for their application in high energy physics as well as in the field of traditional spectroscopy. (author). 11 refs.; 13 figs.; 2 tabs.}
place = {JINR}
year = {1994}
month = {Dec}
}
title = {Investigation of Silicon Planar Detectors for LHC project}
author = {Cheremukhin, A, Golutvin, I, and Rashevskij, A}
abstractNote = {Planar detectors developed by ELMA, Zelenograd, Russia, For high energy physics application have been investigated. Detectors with dimensions 20-20-0.4 mm{sup 3} have been manufactured of high resistivity (2-6 k Ohm {center_dot} cm) n-type float-zone silicon (FZ-Si). Parameters of deep levels in the forbidden gap, defect types and concentration, donor and acceptor impurity concentration have been determined for two samples of starting float zone crystals manufactured by two different producers: FZ-Si from WACKER CHEMITRONICS and Zaporozh`e Titanium-Magnesium Factory (ZTMF, Zaporozh`e, UK).The research includes the measurements of current-voltage characteristics, capacitance-voltage characteristics, charge collection efficiency and signal kinetics for the detector experimental set. The results have shown that the detector parameters are acceptable for their application in high energy physics as well as in the field of traditional spectroscopy. (author). 11 refs.; 13 figs.; 2 tabs.}
place = {JINR}
year = {1994}
month = {Dec}
}