Abstract
The high pressure phase transitions, the equation of state and associated volume collapses of IV - VI compound semiconductors have been analysed by means of a three-body potential (TBP) model approach. The charge-transfer effects, arising from the overlapping or deformation of the electron shells of the adjacent ions leading to the many-body (three-body) interactions, are included explicitly in the crystal potential. The TBP model explains successfully the large Cauchy-discrepancy in these IV-VI semiconductors. The agreement between the present theoretical and available experimental values on the phase transition pressures (P{sub t} = 196, 148, 108 and 226 kbar), cohesive energy and lattice parameters are in reasonably good agreement in almost all the materials under consideration. The charge-transfer effect shows an appreciable influence on the phase transition properties of these materials. (author). 23 refs, 4 figs, 3 tabs.
Gupta, D C;
[1]
Singh, R K
[2]
- International Centre for Theoretical Physics, Trieste (Italy)
- Barkatullah, Univ., Bhopal (India). School of Physics
Citation Formats
Gupta, D C, and Singh, R K.
Phase transition in IV-VI compound semiconductors at high pressures.
IAEA: N. p.,
1991.
Web.
Gupta, D C, & Singh, R K.
Phase transition in IV-VI compound semiconductors at high pressures.
IAEA.
Gupta, D C, and Singh, R K.
1991.
"Phase transition in IV-VI compound semiconductors at high pressures."
IAEA.
@misc{etde_10111751,
title = {Phase transition in IV-VI compound semiconductors at high pressures}
author = {Gupta, D C, and Singh, R K}
abstractNote = {The high pressure phase transitions, the equation of state and associated volume collapses of IV - VI compound semiconductors have been analysed by means of a three-body potential (TBP) model approach. The charge-transfer effects, arising from the overlapping or deformation of the electron shells of the adjacent ions leading to the many-body (three-body) interactions, are included explicitly in the crystal potential. The TBP model explains successfully the large Cauchy-discrepancy in these IV-VI semiconductors. The agreement between the present theoretical and available experimental values on the phase transition pressures (P{sub t} = 196, 148, 108 and 226 kbar), cohesive energy and lattice parameters are in reasonably good agreement in almost all the materials under consideration. The charge-transfer effect shows an appreciable influence on the phase transition properties of these materials. (author). 23 refs, 4 figs, 3 tabs.}
place = {IAEA}
year = {1991}
month = {Sep}
}
title = {Phase transition in IV-VI compound semiconductors at high pressures}
author = {Gupta, D C, and Singh, R K}
abstractNote = {The high pressure phase transitions, the equation of state and associated volume collapses of IV - VI compound semiconductors have been analysed by means of a three-body potential (TBP) model approach. The charge-transfer effects, arising from the overlapping or deformation of the electron shells of the adjacent ions leading to the many-body (three-body) interactions, are included explicitly in the crystal potential. The TBP model explains successfully the large Cauchy-discrepancy in these IV-VI semiconductors. The agreement between the present theoretical and available experimental values on the phase transition pressures (P{sub t} = 196, 148, 108 and 226 kbar), cohesive energy and lattice parameters are in reasonably good agreement in almost all the materials under consideration. The charge-transfer effect shows an appreciable influence on the phase transition properties of these materials. (author). 23 refs, 4 figs, 3 tabs.}
place = {IAEA}
year = {1991}
month = {Sep}
}