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Phase transition in IV-VI compound semiconductors at high pressures

Technical Report:

Abstract

The high pressure phase transitions, the equation of state and associated volume collapses of IV - VI compound semiconductors have been analysed by means of a three-body potential (TBP) model approach. The charge-transfer effects, arising from the overlapping or deformation of the electron shells of the adjacent ions leading to the many-body (three-body) interactions, are included explicitly in the crystal potential. The TBP model explains successfully the large Cauchy-discrepancy in these IV-VI semiconductors. The agreement between the present theoretical and available experimental values on the phase transition pressures (P{sub t} = 196, 148, 108 and 226 kbar), cohesive energy and lattice parameters are in reasonably good agreement in almost all the materials under consideration. The charge-transfer effect shows an appreciable influence on the phase transition properties of these materials. (author). 23 refs, 4 figs, 3 tabs.
Authors:
Gupta, D C; [1]  Singh, R K [2] 
  1. International Centre for Theoretical Physics, Trieste (Italy)
  2. Barkatullah, Univ., Bhopal (India). School of Physics
Publication Date:
Sep 01, 1991
Product Type:
Technical Report
Report Number:
IC-91/286
Reference Number:
SCA: 665000; PA: AIX-23:013807; SN: 92000639396
Resource Relation:
Other Information: PBD: Sep 1991
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; LEAD SELENIDES; PHASE TRANSFORMATIONS; LEAD SULFIDES; LEAD TELLURIDES; SEMICONDUCTOR MATERIALS; TIN TELLURIDES; CRYSTAL FIELD; EQUATIONS OF STATE; HIGH PRESSURE; PRESSURE DEPENDENCE; THEORETICAL DATA; 665000; PHYSICS OF CONDENSED MATTER
OSTI ID:
10111751
Research Organizations:
International Centre for Theoretical Physics (ICTP), Trieste (Italy)
Country of Origin:
IAEA
Language:
English
Other Identifying Numbers:
Other: ON: DE92614534; TRN: XA9130294013807
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
INIS
Size:
17 p.
Announcement Date:
Jun 30, 2005

Technical Report:

Citation Formats

Gupta, D C, and Singh, R K. Phase transition in IV-VI compound semiconductors at high pressures. IAEA: N. p., 1991. Web.
Gupta, D C, & Singh, R K. Phase transition in IV-VI compound semiconductors at high pressures. IAEA.
Gupta, D C, and Singh, R K. 1991. "Phase transition in IV-VI compound semiconductors at high pressures." IAEA.
@misc{etde_10111751,
title = {Phase transition in IV-VI compound semiconductors at high pressures}
author = {Gupta, D C, and Singh, R K}
abstractNote = {The high pressure phase transitions, the equation of state and associated volume collapses of IV - VI compound semiconductors have been analysed by means of a three-body potential (TBP) model approach. The charge-transfer effects, arising from the overlapping or deformation of the electron shells of the adjacent ions leading to the many-body (three-body) interactions, are included explicitly in the crystal potential. The TBP model explains successfully the large Cauchy-discrepancy in these IV-VI semiconductors. The agreement between the present theoretical and available experimental values on the phase transition pressures (P{sub t} = 196, 148, 108 and 226 kbar), cohesive energy and lattice parameters are in reasonably good agreement in almost all the materials under consideration. The charge-transfer effect shows an appreciable influence on the phase transition properties of these materials. (author). 23 refs, 4 figs, 3 tabs.}
place = {IAEA}
year = {1991}
month = {Sep}
}