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Frequency effects in silane plasmas for PECVD

Technical Report:

Abstract

It is generally recognised that the excitation frequency is an important parameter in rf plasma-assisted deposition. VHF silane plasmas (50-100 MHz) have been shown to produce high quality amorphous silicon films up to 20 A/s, and therefore the aim of this work is to compare the VHF range with the 13.56 MHz industrial frequency in the same reactor. The principal diagnostics used are electrical measurements and a CCD camera for spatially-resolved plasma-induced emission with Abel inversion of the plasma image. We present a comparative study of key discharge parameters such as deposition rates, plasma uniformity, ion impact energy, power transfer efficiency and powder formation for the rf range 13-70 MHz. (author) 5 figs., 19 refs.
Authors:
Howling, A A; Dorier, J L; Hollenstein, C; Finger, F; [1]  Kroll, U [2] 
  1. Ecole Polytechnique Federale, Lausanne (Switzerland). Centre de Recherche en Physique des Plasma (CRPP)
  2. IMT, Neuchatel (Switzerland)
Publication Date:
Sep 01, 1991
Product Type:
Technical Report
Report Number:
LRP-435/91
Reference Number:
SCA: 700320; PA: AIX-23:013617; SN: 92000639313
Resource Relation:
Other Information: PBD: Sep 1991
Subject:
70 PLASMA PHYSICS AND FUSION TECHNOLOGY; PLASMA; FREQUENCY DEPENDENCE; SILANES; CAMERAS; ELECTRODES; EMISSION; EXPERIMENTAL DATA; MHZ RANGE 01-100; PLASMA DIAGNOSTICS; POWER LOSSES; SPATIAL RESOLUTION; SPECTROSCOPY; THIN FILMS; 700320; PLASMA DIAGNOSTIC TECHNIQUES AND INSTRUMENTATION
OSTI ID:
10111659
Research Organizations:
Ecole Polytechnique Federale, Lausanne (Switzerland). Centre de Recherche en Physique des Plasma (CRPP)
Country of Origin:
Switzerland
Language:
English
Other Identifying Numbers:
Other: ON: DE92614451; TRN: CH9100676013617
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
CHN
Size:
21 p.
Announcement Date:
Jun 30, 2005

Technical Report:

Citation Formats

Howling, A A, Dorier, J L, Hollenstein, C, Finger, F, and Kroll, U. Frequency effects in silane plasmas for PECVD. Switzerland: N. p., 1991. Web.
Howling, A A, Dorier, J L, Hollenstein, C, Finger, F, & Kroll, U. Frequency effects in silane plasmas for PECVD. Switzerland.
Howling, A A, Dorier, J L, Hollenstein, C, Finger, F, and Kroll, U. 1991. "Frequency effects in silane plasmas for PECVD." Switzerland.
@misc{etde_10111659,
title = {Frequency effects in silane plasmas for PECVD}
author = {Howling, A A, Dorier, J L, Hollenstein, C, Finger, F, and Kroll, U}
abstractNote = {It is generally recognised that the excitation frequency is an important parameter in rf plasma-assisted deposition. VHF silane plasmas (50-100 MHz) have been shown to produce high quality amorphous silicon films up to 20 A/s, and therefore the aim of this work is to compare the VHF range with the 13.56 MHz industrial frequency in the same reactor. The principal diagnostics used are electrical measurements and a CCD camera for spatially-resolved plasma-induced emission with Abel inversion of the plasma image. We present a comparative study of key discharge parameters such as deposition rates, plasma uniformity, ion impact energy, power transfer efficiency and powder formation for the rf range 13-70 MHz. (author) 5 figs., 19 refs.}
place = {Switzerland}
year = {1991}
month = {Sep}
}