Abstract
Charge induced as a function of time in a-Si:H p-i-n detectors by protons having energies ranging between 5 and 12 MeV have been studied. A multiple trapping transport model is developed in order to explain the non saturation of the collected charge with bias and evidence of a bias dependent recombination process is shown. The dependence of the total induced charge (the detector efficiency) with bias can be expressed by an Onsager function with a thermalization distance of 34 A.
Citation Formats
Pochet, T.
Charge collection processes in a-Si:H p-i-n detectors.
France: N. p.,
1993.
Web.
Pochet, T.
Charge collection processes in a-Si:H p-i-n detectors.
France.
Pochet, T.
1993.
"Charge collection processes in a-Si:H p-i-n detectors."
France.
@misc{etde_10109707,
title = {Charge collection processes in a-Si:H p-i-n detectors}
author = {Pochet, T}
abstractNote = {Charge induced as a function of time in a-Si:H p-i-n detectors by protons having energies ranging between 5 and 12 MeV have been studied. A multiple trapping transport model is developed in order to explain the non saturation of the collected charge with bias and evidence of a bias dependent recombination process is shown. The dependence of the total induced charge (the detector efficiency) with bias can be expressed by an Onsager function with a thermalization distance of 34 A.}
place = {France}
year = {1993}
month = {Dec}
}
title = {Charge collection processes in a-Si:H p-i-n detectors}
author = {Pochet, T}
abstractNote = {Charge induced as a function of time in a-Si:H p-i-n detectors by protons having energies ranging between 5 and 12 MeV have been studied. A multiple trapping transport model is developed in order to explain the non saturation of the collected charge with bias and evidence of a bias dependent recombination process is shown. The dependence of the total induced charge (the detector efficiency) with bias can be expressed by an Onsager function with a thermalization distance of 34 A.}
place = {France}
year = {1993}
month = {Dec}
}