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Charge collection processes in a-Si:H p-i-n detectors

Conference:

Abstract

Charge induced as a function of time in a-Si:H p-i-n detectors by protons having energies ranging between 5 and 12 MeV have been studied. A multiple trapping transport model is developed in order to explain the non saturation of the collected charge with bias and evidence of a bias dependent recombination process is shown. The dependence of the total induced charge (the detector efficiency) with bias can be expressed by an Onsager function with a thermalization distance of 34 A.
Authors:
Publication Date:
Dec 01, 1993
Product Type:
Conference
Report Number:
CEA-CONF-11614; CONF-930405-
Reference Number:
SCA: 440104; PA: AIX-25:003485; EDB-94:014667; ERA-19:004975; NTS-94:014085; SN: 93001120737
Resource Relation:
Conference: Spring meeting of the Materials Research Society,San Francisco, CA (United States),12-16 Apr 1993; Other Information: PBD: 1993
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; SILICON DIODES; PROTONS; RESPONSE FUNCTIONS; CHARGE TRANSPORT; MEV RANGE 01-10; MEV RANGE 10-100; 440104; HIGH ENERGY PHYSICS INSTRUMENTATION
OSTI ID:
10109707
Research Organizations:
CEA Centre d`Etudes de Saclay, 91 - Gif-sur-Yvette (France). Dept. d`Electronique et d`Instrumentation Nucleaire
Country of Origin:
France
Language:
English
Other Identifying Numbers:
Other: ON: DE94609356; TRN: FR9303886003485
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
FRN
Size:
7 p.
Announcement Date:
Jun 30, 2005

Conference:

Citation Formats

Pochet, T. Charge collection processes in a-Si:H p-i-n detectors. France: N. p., 1993. Web.
Pochet, T. Charge collection processes in a-Si:H p-i-n detectors. France.
Pochet, T. 1993. "Charge collection processes in a-Si:H p-i-n detectors." France.
@misc{etde_10109707,
title = {Charge collection processes in a-Si:H p-i-n detectors}
author = {Pochet, T}
abstractNote = {Charge induced as a function of time in a-Si:H p-i-n detectors by protons having energies ranging between 5 and 12 MeV have been studied. A multiple trapping transport model is developed in order to explain the non saturation of the collected charge with bias and evidence of a bias dependent recombination process is shown. The dependence of the total induced charge (the detector efficiency) with bias can be expressed by an Onsager function with a thermalization distance of 34 A.}
place = {France}
year = {1993}
month = {Dec}
}