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Fast GaAs photoconductor responses to subnanosecond proton pulses

Conference:

Abstract

GaAs photoconductors have been tailored to detect ultrafast proton pulses having energies ranging between 4 and 9 MeV. The sensitivity, the linearity and the speed of response of the devices are analyzed as a function of their neutron pre-irradiation treatment. The dependence of the sensitivity on the proton energy and the applied polarization is also studied. Finally, the experimental results are compared with a simple theoretical model.
Authors:
Pochet, T; [1]  Brullot, B; Galli, R; Lecat, X; Rubbelynck, C [2] 
  1. CEA Centre d`Etudes de Saclay, 91 - Gif-sur-Yvette (France). Dept. d`Electronique et d`Instrumentation Nucleaire
  2. CEA Centre d`Etudes de Bruyeres-le-Chatel, 91 (France)
Publication Date:
Dec 01, 1993
Product Type:
Conference
Report Number:
CEA-CONF-11613; CONF-930405-
Reference Number:
SCA: 440104; PA: AIX-25:003484; EDB-94:014666; ERA-19:004974; NTS-94:014084; SN: 93001120736
Resource Relation:
Conference: Spring meeting of the Materials Research Society,San Francisco, CA (United States),12-16 Apr 1993; Other Information: PBD: 1993
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; GALLIUM ARSENIDES; PROTONS; SENSITIVITY; PHOTOCONDUCTORS; ENERGY RANGE; MEV RANGE 01-10; PULSED IRRADIATION; RESPONSE FUNCTIONS; 440104; HIGH ENERGY PHYSICS INSTRUMENTATION
OSTI ID:
10109703
Research Organizations:
CEA Centre d`Etudes de Saclay, 91 - Gif-sur-Yvette (France). Dept. d`Electronique et d`Instrumentation Nucleaire
Country of Origin:
France
Language:
English
Other Identifying Numbers:
Other: ON: DE94609355; TRN: FR9303885003484
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
FRN
Size:
6 p.
Announcement Date:
Jun 30, 2005

Conference:

Citation Formats

Pochet, T, Brullot, B, Galli, R, Lecat, X, and Rubbelynck, C. Fast GaAs photoconductor responses to subnanosecond proton pulses. France: N. p., 1993. Web.
Pochet, T, Brullot, B, Galli, R, Lecat, X, & Rubbelynck, C. Fast GaAs photoconductor responses to subnanosecond proton pulses. France.
Pochet, T, Brullot, B, Galli, R, Lecat, X, and Rubbelynck, C. 1993. "Fast GaAs photoconductor responses to subnanosecond proton pulses." France.
@misc{etde_10109703,
title = {Fast GaAs photoconductor responses to subnanosecond proton pulses}
author = {Pochet, T, Brullot, B, Galli, R, Lecat, X, and Rubbelynck, C}
abstractNote = {GaAs photoconductors have been tailored to detect ultrafast proton pulses having energies ranging between 4 and 9 MeV. The sensitivity, the linearity and the speed of response of the devices are analyzed as a function of their neutron pre-irradiation treatment. The dependence of the sensitivity on the proton energy and the applied polarization is also studied. Finally, the experimental results are compared with a simple theoretical model.}
place = {France}
year = {1993}
month = {Dec}
}