The void ordering under irradiation in simple cubic, bcc, fcc and hcp-crystals is considered within the framework of the dislocation model of void lattice formation based upon the absorption of perfect interstitial loops by voids. The ordering criterion is derived taking into account not only perfect loopd but Frank sessile loops and straight dislocations as well. Analytical dependence of void lattice parameters on the concentration of the loop nucleation sites is derived. Impurities are shown to stimulate or prevent void ordering depending on their influence on the loop nature. Finally, a mechanism of loop-punching from submicroscopic overpressurized gas bubbles is considered as a possible source of perfect loops which could induce the swelling saturation and void ordering in fcc metals with low stacking fault energy. 15 refs.; 3 figs.