Abstract
The amorphization process of this A1 films by successive implantation with Mn+ ions at RT and LNT was studied by X-ray diffraction and Rutherford backscattering. For each Mn concentration strain and crystallite size were determined from X-ray line broadening. For RT implantation amorphization sets in at approximately 1 at% Mn by thermally activated local atomic rearrangements which lead to the formation of amorphous clusters. At LNT, a supersaturated solid solution is formed at mean Mn concentration below 5 at %. At higher Mn concentrations amorphous clusters are formed throughout the sample in regions where the local strain level has reached a threshold value which occurs at a critical local Mn concentration of 8.5 at%. The results indicate a preferential short-range migration of Mn atoms from the remaining crystalline material toward the amorphous formed at LNT causing a Mn depletion and partial recovery of the crystalline regions. (author). 11 refs, 8 figs.
Citation Formats
Majid, C A.
Formation mechanisms of amorphous clusters in Mn{sup +} implanted thin A1 films.
IAEA: N. p.,
1991.
Web.
Majid, C A.
Formation mechanisms of amorphous clusters in Mn{sup +} implanted thin A1 films.
IAEA.
Majid, C A.
1991.
"Formation mechanisms of amorphous clusters in Mn{sup +} implanted thin A1 films."
IAEA.
@misc{etde_10105120,
title = {Formation mechanisms of amorphous clusters in Mn{sup +} implanted thin A1 films}
author = {Majid, C A}
abstractNote = {The amorphization process of this A1 films by successive implantation with Mn+ ions at RT and LNT was studied by X-ray diffraction and Rutherford backscattering. For each Mn concentration strain and crystallite size were determined from X-ray line broadening. For RT implantation amorphization sets in at approximately 1 at% Mn by thermally activated local atomic rearrangements which lead to the formation of amorphous clusters. At LNT, a supersaturated solid solution is formed at mean Mn concentration below 5 at %. At higher Mn concentrations amorphous clusters are formed throughout the sample in regions where the local strain level has reached a threshold value which occurs at a critical local Mn concentration of 8.5 at%. The results indicate a preferential short-range migration of Mn atoms from the remaining crystalline material toward the amorphous formed at LNT causing a Mn depletion and partial recovery of the crystalline regions. (author). 11 refs, 8 figs.}
place = {IAEA}
year = {1991}
month = {Jun}
}
title = {Formation mechanisms of amorphous clusters in Mn{sup +} implanted thin A1 films}
author = {Majid, C A}
abstractNote = {The amorphization process of this A1 films by successive implantation with Mn+ ions at RT and LNT was studied by X-ray diffraction and Rutherford backscattering. For each Mn concentration strain and crystallite size were determined from X-ray line broadening. For RT implantation amorphization sets in at approximately 1 at% Mn by thermally activated local atomic rearrangements which lead to the formation of amorphous clusters. At LNT, a supersaturated solid solution is formed at mean Mn concentration below 5 at %. At higher Mn concentrations amorphous clusters are formed throughout the sample in regions where the local strain level has reached a threshold value which occurs at a critical local Mn concentration of 8.5 at%. The results indicate a preferential short-range migration of Mn atoms from the remaining crystalline material toward the amorphous formed at LNT causing a Mn depletion and partial recovery of the crystalline regions. (author). 11 refs, 8 figs.}
place = {IAEA}
year = {1991}
month = {Jun}
}