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Formation mechanisms of amorphous clusters in Mn{sup +} implanted thin A1 films

Technical Report:

Abstract

The amorphization process of this A1 films by successive implantation with Mn+ ions at RT and LNT was studied by X-ray diffraction and Rutherford backscattering. For each Mn concentration strain and crystallite size were determined from X-ray line broadening. For RT implantation amorphization sets in at approximately 1 at% Mn by thermally activated local atomic rearrangements which lead to the formation of amorphous clusters. At LNT, a supersaturated solid solution is formed at mean Mn concentration below 5 at %. At higher Mn concentrations amorphous clusters are formed throughout the sample in regions where the local strain level has reached a threshold value which occurs at a critical local Mn concentration of 8.5 at%. The results indicate a preferential short-range migration of Mn atoms from the remaining crystalline material toward the amorphous formed at LNT causing a Mn depletion and partial recovery of the crystalline regions. (author). 11 refs, 8 figs.
Authors:
Publication Date:
Jun 01, 1991
Product Type:
Technical Report
Report Number:
IC-91/137
Reference Number:
SCA: 665300; 665100; PA: AIX-22:081932; SN: 91000608975
Resource Relation:
Other Information: PBD: Jun 1991
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ION IMPLANTATION; AMORPHOUS STATE; THIN FILMS; ALUMINIUM; MANGANESE IONS; RUTHERFORD SCATTERING; X-RAY DIFFRACTION; 665300; 665100; INTERACTIONS BETWEEN BEAMS AND CONDENSED MATTER; NUCLEAR TECHNIQUES IN CONDENSED MATTER PHYSICS
OSTI ID:
10105120
Research Organizations:
International Centre for Theoretical Physics (ICTP), Trieste (Italy)
Country of Origin:
IAEA
Language:
English
Other Identifying Numbers:
Other: ON: DE92609286; TRN: XA9129658081932
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
INIS
Size:
19 p.
Announcement Date:
Jun 30, 2005

Technical Report:

Citation Formats

Majid, C A. Formation mechanisms of amorphous clusters in Mn{sup +} implanted thin A1 films. IAEA: N. p., 1991. Web.
Majid, C A. Formation mechanisms of amorphous clusters in Mn{sup +} implanted thin A1 films. IAEA.
Majid, C A. 1991. "Formation mechanisms of amorphous clusters in Mn{sup +} implanted thin A1 films." IAEA.
@misc{etde_10105120,
title = {Formation mechanisms of amorphous clusters in Mn{sup +} implanted thin A1 films}
author = {Majid, C A}
abstractNote = {The amorphization process of this A1 films by successive implantation with Mn+ ions at RT and LNT was studied by X-ray diffraction and Rutherford backscattering. For each Mn concentration strain and crystallite size were determined from X-ray line broadening. For RT implantation amorphization sets in at approximately 1 at% Mn by thermally activated local atomic rearrangements which lead to the formation of amorphous clusters. At LNT, a supersaturated solid solution is formed at mean Mn concentration below 5 at %. At higher Mn concentrations amorphous clusters are formed throughout the sample in regions where the local strain level has reached a threshold value which occurs at a critical local Mn concentration of 8.5 at%. The results indicate a preferential short-range migration of Mn atoms from the remaining crystalline material toward the amorphous formed at LNT causing a Mn depletion and partial recovery of the crystalline regions. (author). 11 refs, 8 figs.}
place = {IAEA}
year = {1991}
month = {Jun}
}