The amorphization process of this A1 films by successive implantation with Mn+ ions at RT and LNT was studied by X-ray diffraction and Rutherford backscattering. For each Mn concentration strain and crystallite size were determined from X-ray line broadening. For RT implantation amorphization sets in at approximately 1 at% Mn by thermally activated local atomic rearrangements which lead to the formation of amorphous clusters. At LNT, a supersaturated solid solution is formed at mean Mn concentration below 5 at %. At higher Mn concentrations amorphous clusters are formed throughout the sample in regions where the local strain level has reached a threshold value which occurs at a critical local Mn concentration of 8.5 at%. The results indicate a preferential short-range migration of Mn atoms from the remaining crystalline material toward the amorphous formed at LNT causing a Mn depletion and partial recovery of the crystalline regions. (author). 11 refs, 8 figs.